JPS5538065A - Semiconductor laser device with lens and its preparation - Google Patents

Semiconductor laser device with lens and its preparation

Info

Publication number
JPS5538065A
JPS5538065A JP11189278A JP11189278A JPS5538065A JP S5538065 A JPS5538065 A JP S5538065A JP 11189278 A JP11189278 A JP 11189278A JP 11189278 A JP11189278 A JP 11189278A JP S5538065 A JPS5538065 A JP S5538065A
Authority
JP
Japan
Prior art keywords
rod
beams
lasers
semiconductor laser
laser chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11189278A
Other languages
Japanese (ja)
Other versions
JPS582469B2 (en
Inventor
Masatoshi Saruwatari
Kiyoshi Nawata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP53111892A priority Critical patent/JPS582469B2/en
Publication of JPS5538065A publication Critical patent/JPS5538065A/en
Publication of JPS582469B2 publication Critical patent/JPS582469B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms

Abstract

PURPOSE:To unite lasers and a single mode photo-fiber high efficient, by converting laser beams into symmetrical beams by directly pasting a glass rod with a minute diameter to an output end surface of a semiconductor laser chip by using optical adhesives. CONSTITUTION:A glass rod 2 with a minute diameter prepared by the optical crystals with a high refractive index of lead glass, YAG, sapphire, etc. is mounted to an output end surface of a semiconductor laser chip 1 through optical adhesives 6, and fixed. the length direction of the rod is decided so that it be parallel with a surface that the laser chip 1 and a heat sink 4 are joined, and the rod is fixed at the optimum location while monitoring in order that output from a luminous portion 5 of lasers maximally be combined with a photo-fiber. Thus, asymmetrical beams from the lasers are changed into symmetrical beams by means of the rod 2, and stably united with the single mode photo-fiber high efficient. Q value can be made constant by applying adhesives to portions that avoid the luminous portion 5.
JP53111892A 1978-09-12 1978-09-12 Manufacturing method of semiconductor laser device with lens Expired JPS582469B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53111892A JPS582469B2 (en) 1978-09-12 1978-09-12 Manufacturing method of semiconductor laser device with lens

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53111892A JPS582469B2 (en) 1978-09-12 1978-09-12 Manufacturing method of semiconductor laser device with lens

Publications (2)

Publication Number Publication Date
JPS5538065A true JPS5538065A (en) 1980-03-17
JPS582469B2 JPS582469B2 (en) 1983-01-17

Family

ID=14572748

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53111892A Expired JPS582469B2 (en) 1978-09-12 1978-09-12 Manufacturing method of semiconductor laser device with lens

Country Status (1)

Country Link
JP (1) JPS582469B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009290066A (en) * 2008-05-30 2009-12-10 Toshiba Corp Semiconductor light-emitting device
JP2011101003A (en) * 2009-11-06 2011-05-19 Leister Process Technologies Laser diode structure with temperature-controlled beam shaping element and method for gas detection by means of laser diode structure

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4036491C2 (en) * 1990-11-16 1994-01-27 Danfoss As magnetic valve

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5187984A (en) * 1975-01-30 1976-07-31 Nippon Telegraph & Telephone Hatsukodaioodoto fuaibaanoketsugoho
JPS5361176U (en) * 1976-10-22 1978-05-24

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5187984A (en) * 1975-01-30 1976-07-31 Nippon Telegraph & Telephone Hatsukodaioodoto fuaibaanoketsugoho
JPS5361176U (en) * 1976-10-22 1978-05-24

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009290066A (en) * 2008-05-30 2009-12-10 Toshiba Corp Semiconductor light-emitting device
JP2011101003A (en) * 2009-11-06 2011-05-19 Leister Process Technologies Laser diode structure with temperature-controlled beam shaping element and method for gas detection by means of laser diode structure

Also Published As

Publication number Publication date
JPS582469B2 (en) 1983-01-17

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