JPS5536780A - Measuring method of semiconductor gaseous phase grown film thickness - Google Patents

Measuring method of semiconductor gaseous phase grown film thickness

Info

Publication number
JPS5536780A
JPS5536780A JP11030178A JP11030178A JPS5536780A JP S5536780 A JPS5536780 A JP S5536780A JP 11030178 A JP11030178 A JP 11030178A JP 11030178 A JP11030178 A JP 11030178A JP S5536780 A JPS5536780 A JP S5536780A
Authority
JP
Japan
Prior art keywords
rays
photo
gaseous phase
reflected
reflector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11030178A
Other languages
Japanese (ja)
Inventor
Masashi Ozeki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11030178A priority Critical patent/JPS5536780A/en
Publication of JPS5536780A publication Critical patent/JPS5536780A/en
Pending legal-status Critical Current

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  • Length Measuring Devices By Optical Means (AREA)

Abstract

PURPOSE: To measure the thickness of a grown film from the difference of the photo-paths of laser rays regardless of the concentration of a carrier of a semiconductor substrate without utilizing transmitted light, by making the laser rays in two systems from one laser oscillator reflection interfere.
CONSTITUTION: Laser rays 21, 22 are irradiated through opened holes 11, 12 drilled to a silica tube 10 of a gaseous phase growth furnace. The rays 21 are reflected by means of a gaseous phase growth film 31' of a semiconductor substrate 31, and further reflected by means of a reflector 51. The rays 22 are reflected by means of a reflector 32 on a support base 13, and further reflected by means of a reflector 52. Both reflected rays mutually interfere, are condensed by means of a condenser 61 through a filter 60 and are projected to a photo-detector 62, and a photo-strength curve is recorded to a X-Y recorder 64. An interference filter 60 removes infrared rays generated at growth temperature in the furnace. If the difference Δl of photo- paths is obtained from phase difference that gives the maximum or minimum of the photo-strength curve gained, Δl/2 is the thickness of the gaseous phase growth film.
COPYRIGHT: (C)1980,JPO&Japio
JP11030178A 1978-09-08 1978-09-08 Measuring method of semiconductor gaseous phase grown film thickness Pending JPS5536780A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11030178A JPS5536780A (en) 1978-09-08 1978-09-08 Measuring method of semiconductor gaseous phase grown film thickness

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11030178A JPS5536780A (en) 1978-09-08 1978-09-08 Measuring method of semiconductor gaseous phase grown film thickness

Publications (1)

Publication Number Publication Date
JPS5536780A true JPS5536780A (en) 1980-03-14

Family

ID=14532221

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11030178A Pending JPS5536780A (en) 1978-09-08 1978-09-08 Measuring method of semiconductor gaseous phase grown film thickness

Country Status (1)

Country Link
JP (1) JPS5536780A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0254883U (en) * 1988-10-15 1990-04-20
JPH02116574U (en) * 1989-03-04 1990-09-18
JPH02116573U (en) * 1989-03-04 1990-09-18
JPH02272119A (en) * 1989-04-13 1990-11-06 Inax Corp Method of installing sanitary ware

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0254883U (en) * 1988-10-15 1990-04-20
JPH02116574U (en) * 1989-03-04 1990-09-18
JPH02116573U (en) * 1989-03-04 1990-09-18
JPH02272119A (en) * 1989-04-13 1990-11-06 Inax Corp Method of installing sanitary ware

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