JPS5536189B2 - - Google Patents

Info

Publication number
JPS5536189B2
JPS5536189B2 JP10276275A JP10276275A JPS5536189B2 JP S5536189 B2 JPS5536189 B2 JP S5536189B2 JP 10276275 A JP10276275 A JP 10276275A JP 10276275 A JP10276275 A JP 10276275A JP S5536189 B2 JPS5536189 B2 JP S5536189B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10276275A
Other languages
Japanese (ja)
Other versions
JPS5227277A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP50102762A priority Critical patent/JPS5227277A/ja
Publication of JPS5227277A publication Critical patent/JPS5227277A/ja
Publication of JPS5536189B2 publication Critical patent/JPS5536189B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP50102762A 1975-08-25 1975-08-25 Darlington connction type semiconductor unit Granted JPS5227277A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50102762A JPS5227277A (en) 1975-08-25 1975-08-25 Darlington connction type semiconductor unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50102762A JPS5227277A (en) 1975-08-25 1975-08-25 Darlington connction type semiconductor unit

Publications (2)

Publication Number Publication Date
JPS5227277A JPS5227277A (en) 1977-03-01
JPS5536189B2 true JPS5536189B2 (no) 1980-09-19

Family

ID=14336193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50102762A Granted JPS5227277A (en) 1975-08-25 1975-08-25 Darlington connction type semiconductor unit

Country Status (1)

Country Link
JP (1) JPS5227277A (no)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS567473A (en) * 1979-06-29 1981-01-26 Mitsubishi Electric Corp Semiconductor switching device
JPS56155569A (en) * 1980-05-02 1981-12-01 Nec Corp Reverse conducting power transistor
JPS60138964A (ja) * 1983-12-27 1985-07-23 Fuji Electric Co Ltd 半導体装置
JPS61107773A (ja) * 1984-10-30 1986-05-26 Mitsubishi Electric Corp 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5022585A (no) * 1973-05-25 1975-03-11
JPS5081291A (no) * 1973-11-16 1975-07-01

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5022585A (no) * 1973-05-25 1975-03-11
JPS5081291A (no) * 1973-11-16 1975-07-01

Also Published As

Publication number Publication date
JPS5227277A (en) 1977-03-01

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