JPS5534690A - Low pressure gas phase growing apparatus - Google Patents

Low pressure gas phase growing apparatus

Info

Publication number
JPS5534690A
JPS5534690A JP10880078A JP10880078A JPS5534690A JP S5534690 A JPS5534690 A JP S5534690A JP 10880078 A JP10880078 A JP 10880078A JP 10880078 A JP10880078 A JP 10880078A JP S5534690 A JPS5534690 A JP S5534690A
Authority
JP
Japan
Prior art keywords
gas
wafer
tube
reactant
gas phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10880078A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6122027B2 (enrdf_load_stackoverflow
Inventor
Masakazu Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP10880078A priority Critical patent/JPS5534690A/ja
Publication of JPS5534690A publication Critical patent/JPS5534690A/ja
Publication of JPS6122027B2 publication Critical patent/JPS6122027B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45504—Laminar flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP10880078A 1978-09-04 1978-09-04 Low pressure gas phase growing apparatus Granted JPS5534690A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10880078A JPS5534690A (en) 1978-09-04 1978-09-04 Low pressure gas phase growing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10880078A JPS5534690A (en) 1978-09-04 1978-09-04 Low pressure gas phase growing apparatus

Publications (2)

Publication Number Publication Date
JPS5534690A true JPS5534690A (en) 1980-03-11
JPS6122027B2 JPS6122027B2 (enrdf_load_stackoverflow) 1986-05-29

Family

ID=14493796

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10880078A Granted JPS5534690A (en) 1978-09-04 1978-09-04 Low pressure gas phase growing apparatus

Country Status (1)

Country Link
JP (1) JPS5534690A (enrdf_load_stackoverflow)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57139931A (en) * 1981-02-24 1982-08-30 Mitsubishi Electric Corp Resin-sealing mold for semiconductor device
JPS5956576A (ja) * 1982-08-27 1984-04-02 Yokogawa Hewlett Packard Ltd 薄膜形成方法
JPS6033352A (ja) * 1983-08-02 1985-02-20 Kokusai Electric Co Ltd 減圧ｃｖｄ装置
JPH04255315A (ja) * 1991-02-07 1992-09-10 Nec Kyushu Ltd 樹脂封止金型
JP2008172205A (ja) * 2006-12-12 2008-07-24 Hitachi Kokusai Electric Inc 基板処理装置、半導体装置の製造方法、および反応容器
JP2009298638A (ja) * 2008-06-12 2009-12-24 Hitachi Zosen Corp カーボンナノチューブ製造装置
JP2011195863A (ja) * 2010-03-18 2011-10-06 Mitsui Eng & Shipbuild Co Ltd 原子層堆積装置及び原子層堆積方法
JP2012227265A (ja) * 2011-04-18 2012-11-15 Tokyo Electron Ltd 熱処理装置
US8420167B2 (en) 2006-12-12 2013-04-16 Hitachi Kokusai Electric Inc. Method of manufacturing a semiconductor device
CN103866294A (zh) * 2014-04-03 2014-06-18 江西沃格光电股份有限公司 镀膜充气装置
JP2015137415A (ja) * 2014-01-24 2015-07-30 エヌシーディ・カンパニー・リミテッドＮｃｄ Ｃｏ．，Ｌｔｄ． 大面積原子層蒸着装置
WO2021156987A1 (ja) * 2020-02-05 2021-08-12 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法および記録媒体

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS505562U (enrdf_load_stackoverflow) * 1973-05-17 1975-01-21

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS505562U (enrdf_load_stackoverflow) * 1973-05-17 1975-01-21

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57139931A (en) * 1981-02-24 1982-08-30 Mitsubishi Electric Corp Resin-sealing mold for semiconductor device
JPS5956576A (ja) * 1982-08-27 1984-04-02 Yokogawa Hewlett Packard Ltd 薄膜形成方法
JPS6033352A (ja) * 1983-08-02 1985-02-20 Kokusai Electric Co Ltd 減圧ｃｖｄ装置
JPH04255315A (ja) * 1991-02-07 1992-09-10 Nec Kyushu Ltd 樹脂封止金型
JP2012099864A (ja) * 2006-12-12 2012-05-24 Hitachi Kokusai Electric Inc 基板処理装置、半導体装置の製造方法、および反応管
JP2009135551A (ja) * 2006-12-12 2009-06-18 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP2008172205A (ja) * 2006-12-12 2008-07-24 Hitachi Kokusai Electric Inc 基板処理装置、半導体装置の製造方法、および反応容器
US8420167B2 (en) 2006-12-12 2013-04-16 Hitachi Kokusai Electric Inc. Method of manufacturing a semiconductor device
JP2009298638A (ja) * 2008-06-12 2009-12-24 Hitachi Zosen Corp カーボンナノチューブ製造装置
JP2011195863A (ja) * 2010-03-18 2011-10-06 Mitsui Eng & Shipbuild Co Ltd 原子層堆積装置及び原子層堆積方法
JP2012227265A (ja) * 2011-04-18 2012-11-15 Tokyo Electron Ltd 熱処理装置
JP2015137415A (ja) * 2014-01-24 2015-07-30 エヌシーディ・カンパニー・リミテッドＮｃｄ Ｃｏ．，Ｌｔｄ． 大面積原子層蒸着装置
CN103866294A (zh) * 2014-04-03 2014-06-18 江西沃格光电股份有限公司 镀膜充气装置
CN103866294B (zh) * 2014-04-03 2017-01-11 江西沃格光电股份有限公司 镀膜充气装置
WO2021156987A1 (ja) * 2020-02-05 2021-08-12 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法および記録媒体
JPWO2021156987A1 (enrdf_load_stackoverflow) * 2020-02-05 2021-08-12

Also Published As

Publication number Publication date
JPS6122027B2 (enrdf_load_stackoverflow) 1986-05-29

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