JPS5530870A - Multiwave-length semiconductor laser - Google Patents

Multiwave-length semiconductor laser

Info

Publication number
JPS5530870A
JPS5530870A JP10460278A JP10460278A JPS5530870A JP S5530870 A JPS5530870 A JP S5530870A JP 10460278 A JP10460278 A JP 10460278A JP 10460278 A JP10460278 A JP 10460278A JP S5530870 A JPS5530870 A JP S5530870A
Authority
JP
Japan
Prior art keywords
wave
lengths
multiwave
prism
tip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10460278A
Other languages
Japanese (ja)
Other versions
JPS6053479B2 (en
Inventor
Hideo Kuwabara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10460278A priority Critical patent/JPS6053479B2/en
Publication of JPS5530870A publication Critical patent/JPS5530870A/en
Publication of JPS6053479B2 publication Critical patent/JPS6053479B2/en
Expired legal-status Critical Current

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Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To provide a miniature as well as highly efficient device by providing a stripe for each wave-length above a single semiconductor tip so that radiations of various wave-lengths are collected, dispersed and emitted by means of a prism.
CONSTITUTION: Stripes STP1 to STPm, their number being m, present above a semiconductor tip TP are so arranged that their extensions meet together at a point M on an edge of the semiconductor tip. The space from the polyhedral faces of tip TP to the radiating face RD of a prism PRM forms a resonator for wave- lengths λ1 to λm which are determined by each stripe, thus radiation of individual wave-lengths being obtained. Multiwave-length light is emitted simultaneously and vertically from face RD of prism PRM and can be transmitted farther by means of an optical fiber OPF.
COPYRIGHT: (C)1980,JPO&Japio
JP10460278A 1978-08-28 1978-08-28 Multi-wave semiconductor laser Expired JPS6053479B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10460278A JPS6053479B2 (en) 1978-08-28 1978-08-28 Multi-wave semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10460278A JPS6053479B2 (en) 1978-08-28 1978-08-28 Multi-wave semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5530870A true JPS5530870A (en) 1980-03-04
JPS6053479B2 JPS6053479B2 (en) 1985-11-26

Family

ID=14384958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10460278A Expired JPS6053479B2 (en) 1978-08-28 1978-08-28 Multi-wave semiconductor laser

Country Status (1)

Country Link
JP (1) JPS6053479B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61120486A (en) * 1984-11-16 1986-06-07 Canon Inc Semiconductor device
US4799229A (en) * 1986-05-15 1989-01-17 Canon Kabushiki Kaisha Semiconductor laser array
US4971415A (en) * 1984-11-16 1990-11-20 Canon Kabushiki Kaisha Multibeam emitting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61120486A (en) * 1984-11-16 1986-06-07 Canon Inc Semiconductor device
US4971415A (en) * 1984-11-16 1990-11-20 Canon Kabushiki Kaisha Multibeam emitting device
US4799229A (en) * 1986-05-15 1989-01-17 Canon Kabushiki Kaisha Semiconductor laser array

Also Published As

Publication number Publication date
JPS6053479B2 (en) 1985-11-26

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