JPS5530834A - Method of forming ohmic contact in semiconductor pellet - Google Patents

Method of forming ohmic contact in semiconductor pellet

Info

Publication number
JPS5530834A
JPS5530834A JP10364678A JP10364678A JPS5530834A JP S5530834 A JPS5530834 A JP S5530834A JP 10364678 A JP10364678 A JP 10364678A JP 10364678 A JP10364678 A JP 10364678A JP S5530834 A JPS5530834 A JP S5530834A
Authority
JP
Japan
Prior art keywords
ohmic contact
mounting
alloying
layer
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10364678A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6148776B2 (enrdf_load_stackoverflow
Inventor
Yoshiyuki Hayakawa
Tsutomu Koshimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10364678A priority Critical patent/JPS5530834A/ja
Publication of JPS5530834A publication Critical patent/JPS5530834A/ja
Publication of JPS6148776B2 publication Critical patent/JPS6148776B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
JP10364678A 1978-08-25 1978-08-25 Method of forming ohmic contact in semiconductor pellet Granted JPS5530834A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10364678A JPS5530834A (en) 1978-08-25 1978-08-25 Method of forming ohmic contact in semiconductor pellet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10364678A JPS5530834A (en) 1978-08-25 1978-08-25 Method of forming ohmic contact in semiconductor pellet

Publications (2)

Publication Number Publication Date
JPS5530834A true JPS5530834A (en) 1980-03-04
JPS6148776B2 JPS6148776B2 (enrdf_load_stackoverflow) 1986-10-25

Family

ID=14359530

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10364678A Granted JPS5530834A (en) 1978-08-25 1978-08-25 Method of forming ohmic contact in semiconductor pellet

Country Status (1)

Country Link
JP (1) JPS5530834A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57210637A (en) * 1981-06-18 1982-12-24 Mitsubishi Electric Corp Semiconductor device
JPS58112337A (ja) * 1981-12-25 1983-07-04 Mitsubishi Electric Corp 化合物半導体装置の製造方法
WO1983003713A1 (en) * 1982-04-12 1983-10-27 Motorola Inc OHMIC CONTACT FOR N-TYPE GaAs
JPS6170984A (ja) * 1984-09-01 1986-04-11 ベ−リンガー　インゲルハイム　インタ−ナシヨナル　ゲゼルシヤフト　ミツト　ベシユレンクテル　ハフツンク 組換え操作によつて製造されたペプチドを単離するための細菌細胞の機械的破壊方法
JPS6384125A (ja) * 1986-09-29 1988-04-14 Nec Corp 化合物半導体の電極形成法
JPH02138753A (ja) * 1988-11-18 1990-05-28 Sanyo Electric Co Ltd 半導体ペレットと半導体装置の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57210637A (en) * 1981-06-18 1982-12-24 Mitsubishi Electric Corp Semiconductor device
JPS58112337A (ja) * 1981-12-25 1983-07-04 Mitsubishi Electric Corp 化合物半導体装置の製造方法
WO1983003713A1 (en) * 1982-04-12 1983-10-27 Motorola Inc OHMIC CONTACT FOR N-TYPE GaAs
JPS6170984A (ja) * 1984-09-01 1986-04-11 ベ−リンガー　インゲルハイム　インタ−ナシヨナル　ゲゼルシヤフト　ミツト　ベシユレンクテル　ハフツンク 組換え操作によつて製造されたペプチドを単離するための細菌細胞の機械的破壊方法
JPS6384125A (ja) * 1986-09-29 1988-04-14 Nec Corp 化合物半導体の電極形成法
JPH02138753A (ja) * 1988-11-18 1990-05-28 Sanyo Electric Co Ltd 半導体ペレットと半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6148776B2 (enrdf_load_stackoverflow) 1986-10-25

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