JPS5528232B2 - - Google Patents
Info
- Publication number
- JPS5528232B2 JPS5528232B2 JP12555474A JP12555474A JPS5528232B2 JP S5528232 B2 JPS5528232 B2 JP S5528232B2 JP 12555474 A JP12555474 A JP 12555474A JP 12555474 A JP12555474 A JP 12555474A JP S5528232 B2 JPS5528232 B2 JP S5528232B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H10P14/6309—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
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- H10P14/6322—
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- H10P14/6502—
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12555474A JPS5528232B2 (en:Method) | 1974-11-01 | 1974-11-01 | |
| NLAANVRAGE7512828,A NL176721C (nl) | 1974-11-01 | 1975-10-31 | Werkwijze voor het vervaardigen van een halfgeleidergeheugeninrichting. |
| DE2548903A DE2548903C2 (de) | 1974-11-01 | 1975-10-31 | Verfahren zur Herstellung eines Speicher-Feldeffekttransistors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12555474A JPS5528232B2 (en:Method) | 1974-11-01 | 1974-11-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5152281A JPS5152281A (en:Method) | 1976-05-08 |
| JPS5528232B2 true JPS5528232B2 (en:Method) | 1980-07-26 |
Family
ID=14913063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12555474A Expired JPS5528232B2 (en:Method) | 1974-11-01 | 1974-11-01 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS5528232B2 (en:Method) |
| DE (1) | DE2548903C2 (en:Method) |
| NL (1) | NL176721C (en:Method) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53122374A (en) * | 1977-03-31 | 1978-10-25 | Fujitsu Ltd | Manufacture for double gate consitution semiconductor device |
| DE2743422A1 (de) * | 1977-09-27 | 1979-03-29 | Siemens Ag | Wortweise loeschbarer, nicht fluechtiger speicher in floating-gate-technik |
| DE2803431A1 (de) * | 1978-01-26 | 1979-08-02 | Siemens Ag | Verfahren zur herstellung von mos-transistoren |
| DE2814052A1 (de) * | 1978-03-31 | 1979-10-11 | Siemens Ag | Verfahren zur herstellung von oxidisolationsschichten fuer floating-gate-mos- transistoren, bzw. mos-transistoren mit mindestens zwei polysilicium-elektroden |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA813537A (en) * | 1967-10-17 | 1969-05-20 | Joseph H. Scott, Jr. | Semiconductor memory device |
| GB1363190A (en) * | 1972-05-31 | 1974-08-14 | Plessey Co Ltd | Semiconductor memory device |
| JPS5330310B2 (en:Method) * | 1972-09-13 | 1978-08-25 |
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1974
- 1974-11-01 JP JP12555474A patent/JPS5528232B2/ja not_active Expired
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1975
- 1975-10-31 NL NLAANVRAGE7512828,A patent/NL176721C/xx not_active IP Right Cessation
- 1975-10-31 DE DE2548903A patent/DE2548903C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL7512828A (nl) | 1976-05-04 |
| DE2548903A1 (de) | 1976-05-06 |
| NL176721B (nl) | 1984-12-17 |
| NL176721C (nl) | 1985-05-17 |
| DE2548903C2 (de) | 1984-08-30 |
| JPS5152281A (en:Method) | 1976-05-08 |