JPS5527760A - Mosfet driving circuit - Google Patents
Mosfet driving circuitInfo
- Publication number
- JPS5527760A JPS5527760A JP10094378A JP10094378A JPS5527760A JP S5527760 A JPS5527760 A JP S5527760A JP 10094378 A JP10094378 A JP 10094378A JP 10094378 A JP10094378 A JP 10094378A JP S5527760 A JPS5527760 A JP S5527760A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- output
- plus
- level
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/018—Coupling arrangements; Interface arrangements using bipolar transistors only
- H03K19/01806—Interface arrangements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Electronic Switches (AREA)
- Logic Circuits (AREA)
Abstract
PURPOSE:To secure a forced driving for the rise part of the output waveform as well as to give clamping to the flat part of the output voltage to the power voltage by connecting the PNP transistor and the circuit to drive the transistor to the MOSFET featuring the NAND function with the output off-buffer. CONSTITUTION:The active pull-down circuit, comprising Schottky diode D1 for input use, phase splitter transistors Q1 and Q2, transistor Q3 plus resistances R5 and R6, is installed between input terminal IN and output terminal OUT. In addition, the following component parts are provided: the output off-buffer circuit consisting of transistors Q6 and Q7, resistance R9 plus diode D5; the PNP transistor driving circuit comprising diodes D2 - D4, resistances R4 and R8 plus transistor Q4; transistor Q5 which clamps the H level of the output voltage to power voltage VCC; and others. Thus the waveform rise is improved when the input of terminal IN changes from H to L level, and furthermore the flat area of the H level is clamped to the power voltage.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10094378A JPS5527760A (en) | 1978-08-21 | 1978-08-21 | Mosfet driving circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10094378A JPS5527760A (en) | 1978-08-21 | 1978-08-21 | Mosfet driving circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5527760A true JPS5527760A (en) | 1980-02-28 |
Family
ID=14287426
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10094378A Pending JPS5527760A (en) | 1978-08-21 | 1978-08-21 | Mosfet driving circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5527760A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5846713A (en) * | 1981-09-14 | 1983-03-18 | Seiko Epson Corp | Level shifting circuit |
JPH01291519A (en) * | 1988-05-18 | 1989-11-24 | Shimizu Corp | Hgih withstand voltage transmission control circuit |
JPH0337171U (en) * | 1989-08-21 | 1991-04-10 |
-
1978
- 1978-08-21 JP JP10094378A patent/JPS5527760A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5846713A (en) * | 1981-09-14 | 1983-03-18 | Seiko Epson Corp | Level shifting circuit |
JPH01291519A (en) * | 1988-05-18 | 1989-11-24 | Shimizu Corp | Hgih withstand voltage transmission control circuit |
JPH0337171U (en) * | 1989-08-21 | 1991-04-10 |
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