JPS5450257A - Power amplifier - Google Patents

Power amplifier

Info

Publication number
JPS5450257A
JPS5450257A JP11632177A JP11632177A JPS5450257A JP S5450257 A JPS5450257 A JP S5450257A JP 11632177 A JP11632177 A JP 11632177A JP 11632177 A JP11632177 A JP 11632177A JP S5450257 A JPS5450257 A JP S5450257A
Authority
JP
Japan
Prior art keywords
transistor
power amplifier
transistors
collector
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11632177A
Other languages
Japanese (ja)
Other versions
JPS6047772B2 (en
Inventor
Masashi Shoji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11632177A priority Critical patent/JPS6047772B2/en
Publication of JPS5450257A publication Critical patent/JPS5450257A/en
Publication of JPS6047772B2 publication Critical patent/JPS6047772B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To reduce the area to make a power amplifier suitable for making in into an IC, by inserting the first and the second diodes or transistors in parallel between the output terminal of a pre-driving transistor and the constant-current supply and taking out the output from one diode to apply the idling current to the power amplifier. CONSTITUTION:Transistor 17 and resistance 18 are newly added to the power amplifier consisting of constant-current supplies 2 and 5, pre-driving transistor 4, phase inversion transistor 6, driving transistors 10 and 12, output transistors 11 and 13, transistors 3, 8 and 9, etc. That is, the emitter of transistor 17 is connected to the emitter of transistor 3, and the collector is connected to not only the base of transistor 17 but also the collector of transistor 3 through resistance 18. Then, the connection point of resistance 18 and the collector is connected to the base of transistor 6. As a result, the area of the semiconductor element which determines the idling current is reduced considerably, and it is easy to make the power amplifier into an IC.
JP11632177A 1977-09-27 1977-09-27 power amplifier Expired JPS6047772B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11632177A JPS6047772B2 (en) 1977-09-27 1977-09-27 power amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11632177A JPS6047772B2 (en) 1977-09-27 1977-09-27 power amplifier

Publications (2)

Publication Number Publication Date
JPS5450257A true JPS5450257A (en) 1979-04-20
JPS6047772B2 JPS6047772B2 (en) 1985-10-23

Family

ID=14684079

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11632177A Expired JPS6047772B2 (en) 1977-09-27 1977-09-27 power amplifier

Country Status (1)

Country Link
JP (1) JPS6047772B2 (en)

Also Published As

Publication number Publication date
JPS6047772B2 (en) 1985-10-23

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