JPS5527474B2 - - Google Patents
Info
- Publication number
- JPS5527474B2 JPS5527474B2 JP10291271A JP10291271A JPS5527474B2 JP S5527474 B2 JPS5527474 B2 JP S5527474B2 JP 10291271 A JP10291271 A JP 10291271A JP 10291271 A JP10291271 A JP 10291271A JP S5527474 B2 JPS5527474 B2 JP S5527474B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10291271A JPS5527474B2 (cs) | 1971-12-17 | 1971-12-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10291271A JPS5527474B2 (cs) | 1971-12-17 | 1971-12-17 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1134482A Division JPS5853520B2 (ja) | 1982-01-27 | 1982-01-27 | 半導体レ−ザ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4866980A JPS4866980A (cs) | 1973-09-13 |
| JPS5527474B2 true JPS5527474B2 (cs) | 1980-07-21 |
Family
ID=14340051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10291271A Expired JPS5527474B2 (cs) | 1971-12-17 | 1971-12-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5527474B2 (cs) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3958263A (en) * | 1973-11-12 | 1976-05-18 | Bell Telephone Laboratories, Incorporated | Stress reduction in algaas-algaasp multilayer structures |
| JPS5639069B2 (cs) * | 1973-12-24 | 1981-09-10 | ||
| JPS5946113B2 (ja) * | 1975-02-21 | 1984-11-10 | 株式会社日立製作所 | 半導体レ−ザ素子およびその製造方法 |
| JPS51100688A (ja) * | 1975-03-03 | 1976-09-06 | Nippon Electric Co | Chunyugatahandotaireezasoshi |
| JPS5224480A (en) * | 1975-08-20 | 1977-02-23 | Matsushita Electric Ind Co Ltd | Semiconductor laser |
| JPS6055998B2 (ja) * | 1976-06-08 | 1985-12-07 | 日本電信電話株式会社 | 半導体レ−ザ |
| JPS5361985A (en) * | 1976-11-15 | 1978-06-02 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser |
| JPS5425183A (en) * | 1977-07-27 | 1979-02-24 | Nec Corp | Manufacture for semiconductor laser device |
| JPS56112790A (en) * | 1980-02-12 | 1981-09-05 | Semiconductor Res Found | Junction type semiconductor laser |
| US4751708A (en) * | 1982-03-29 | 1988-06-14 | International Business Machines Corporation | Semiconductor injection lasers |
| JPS58225677A (ja) * | 1982-06-23 | 1983-12-27 | Agency Of Ind Science & Technol | 高出力半導体レ−ザ装置 |
| JPS60113983A (ja) * | 1983-11-26 | 1985-06-20 | Mitsubishi Electric Corp | 半導体発光装置およびその製造方法 |
| US4559696A (en) * | 1984-07-11 | 1985-12-24 | Fairchild Camera & Instrument Corporation | Ion implantation to increase emitter energy gap in bipolar transistors |
| JPS6063982A (ja) * | 1984-07-30 | 1985-04-12 | Hitachi Ltd | 半導体レ−ザ素子 |
| JPS61220394A (ja) * | 1985-03-26 | 1986-09-30 | Mitsubishi Electric Corp | レーザダイオードの製造方法 |
| JP2527024B2 (ja) * | 1989-02-13 | 1996-08-21 | 日本電気株式会社 | 半導体レ―ザ |
-
1971
- 1971-12-17 JP JP10291271A patent/JPS5527474B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4866980A (cs) | 1973-09-13 |