JPS5515869A - Non-metallic materialsigma superficial decorative scratch-like pattern forming method and thus processed product - Google Patents

Non-metallic materialsigma superficial decorative scratch-like pattern forming method and thus processed product

Info

Publication number
JPS5515869A
JPS5515869A JP8958978A JP8958978A JPS5515869A JP S5515869 A JPS5515869 A JP S5515869A JP 8958978 A JP8958978 A JP 8958978A JP 8958978 A JP8958978 A JP 8958978A JP S5515869 A JPS5515869 A JP S5515869A
Authority
JP
Japan
Prior art keywords
metallic
metal
powder
materialsigma
scratch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8958978A
Other languages
English (en)
Other versions
JPS5844077B2 (ja
Inventor
Noboru Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BIKOU GIKEN KK
BIKOU GIKEN YUUGEN
SHIYOUEI TOKUSHIYU INSATSU KOG
SHOEI TOKUSHU INSATSU KOGYO KK
Original Assignee
BIKOU GIKEN KK
BIKOU GIKEN YUUGEN
SHIYOUEI TOKUSHIYU INSATSU KOG
SHOEI TOKUSHU INSATSU KOGYO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BIKOU GIKEN KK, BIKOU GIKEN YUUGEN, SHIYOUEI TOKUSHIYU INSATSU KOG, SHOEI TOKUSHU INSATSU KOGYO KK filed Critical BIKOU GIKEN KK
Priority to JP53089589A priority Critical patent/JPS5844077B2/ja
Publication of JPS5515869A publication Critical patent/JPS5515869A/ja
Publication of JPS5844077B2 publication Critical patent/JPS5844077B2/ja
Expired legal-status Critical Current

Links

JP53089589A 1978-07-21 1978-07-21 非金属表面の表面に装飾的擦痕模様を形成する方法 Expired JPS5844077B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53089589A JPS5844077B2 (ja) 1978-07-21 1978-07-21 非金属表面の表面に装飾的擦痕模様を形成する方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53089589A JPS5844077B2 (ja) 1978-07-21 1978-07-21 非金属表面の表面に装飾的擦痕模様を形成する方法

Publications (2)

Publication Number Publication Date
JPS5515869A true JPS5515869A (en) 1980-02-04
JPS5844077B2 JPS5844077B2 (ja) 1983-09-30

Family

ID=13974961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53089589A Expired JPS5844077B2 (ja) 1978-07-21 1978-07-21 非金属表面の表面に装飾的擦痕模様を形成する方法

Country Status (1)

Country Link
JP (1) JPS5844077B2 (ja)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182174A (ja) * 1984-02-28 1985-09-17 Nec Corp 不揮発性半導体メモリ
US6424008B1 (en) 1992-10-30 2002-07-23 Semiconductor Energy Laboratory Co., Ltd. Memory device having a floating gate
US7692232B2 (en) 2006-03-21 2010-04-06 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
US7723773B2 (en) 2006-02-10 2010-05-25 Semiconductor Energy Laboratory Co., Ltd Nonvolatile semiconductor storage device and manufacturing method thereof
US7760552B2 (en) 2006-03-31 2010-07-20 Semiconductor Energy Laboratory Co., Ltd. Verification method for nonvolatile semiconductor memory device
US7786526B2 (en) 2006-03-31 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
US7842992B2 (en) 2006-03-31 2010-11-30 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device having floating gate that includes two layers
US8022460B2 (en) 2006-03-31 2011-09-20 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
CN102452238A (zh) * 2010-10-21 2012-05-16 林扬凰 一种印刷工艺及其产品
US8212302B2 (en) 2006-03-21 2012-07-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
US8227863B2 (en) 2006-03-21 2012-07-24 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013097729A1 (en) 2011-12-27 2013-07-04 Shenzhen Byd Auto R&D Company Limited Ink composition, method of metalizing surface and article obtainable

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5129449A (en) * 1974-09-05 1976-03-12 Nissan Chemical Ind Ltd Arukiru mataha ararukiruanirinrui no seizohoho
JPS5227209A (en) * 1975-08-26 1977-03-01 Fujitsu Ltd Pcm group transmission relay system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5129449A (en) * 1974-09-05 1976-03-12 Nissan Chemical Ind Ltd Arukiru mataha ararukiruanirinrui no seizohoho
JPS5227209A (en) * 1975-08-26 1977-03-01 Fujitsu Ltd Pcm group transmission relay system

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182174A (ja) * 1984-02-28 1985-09-17 Nec Corp 不揮発性半導体メモリ
US6424008B1 (en) 1992-10-30 2002-07-23 Semiconductor Energy Laboratory Co., Ltd. Memory device having a floating gate
US7622343B2 (en) 1992-10-30 2009-11-24 Semiconductor Energy Laboratory Co., Ltd. Laser processing method, method for forming a flash memory, insulated gate semiconductor device and method for forming the same
US7723773B2 (en) 2006-02-10 2010-05-25 Semiconductor Energy Laboratory Co., Ltd Nonvolatile semiconductor storage device and manufacturing method thereof
US8338257B2 (en) 2006-02-10 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor storage device and manufacturing method thereof
US8212302B2 (en) 2006-03-21 2012-07-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
US7692232B2 (en) 2006-03-21 2010-04-06 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
US8227863B2 (en) 2006-03-21 2012-07-24 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
US7786526B2 (en) 2006-03-31 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
US8022460B2 (en) 2006-03-31 2011-09-20 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
US8018776B2 (en) 2006-03-31 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Verification method for nonvolatile semiconductor memory device
US7842992B2 (en) 2006-03-31 2010-11-30 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device having floating gate that includes two layers
US7760552B2 (en) 2006-03-31 2010-07-20 Semiconductor Energy Laboratory Co., Ltd. Verification method for nonvolatile semiconductor memory device
CN102452238A (zh) * 2010-10-21 2012-05-16 林扬凰 一种印刷工艺及其产品

Also Published As

Publication number Publication date
JPS5844077B2 (ja) 1983-09-30

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