JPS55146955A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55146955A
JPS55146955A JP5348779A JP5348779A JPS55146955A JP S55146955 A JPS55146955 A JP S55146955A JP 5348779 A JP5348779 A JP 5348779A JP 5348779 A JP5348779 A JP 5348779A JP S55146955 A JPS55146955 A JP S55146955A
Authority
JP
Japan
Prior art keywords
transistor
input
current
temperature
fluctuation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5348779A
Other languages
Japanese (ja)
Inventor
Makoto Furuhata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5348779A priority Critical patent/JPS55146955A/en
Publication of JPS55146955A publication Critical patent/JPS55146955A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature

Abstract

PURPOSE:To avoid the fluctuation of characteristic of semiconductor device due to temperature difference, the device being of the type having a diode or a transistor as an input element and a transistor as an output element are mounted on a common semiconductor substrate to form a current-mirror circuit, by arranging such that the elements are divided into a plurality of segments and arranged alternately. CONSTITUTION:In forming a current mirror circuit by disposing a transistor Q1 acting as an input diode and transistors Q2 and Q3 of the output side on a common semiconductor substrate, these transistors are arranged such that the input side and the output side are disposed alternatingly at each side of the transistor Q1, i.e. in the order of Q2,Q1,Q3. The emitter resistances R1,R2,R3 connected to respective transistor are also disposed alternately in the same manner. This arrangement permits the cancellation of the temperature differential between the transistor Q1 and Q2 and between Q1 and Q3 even when a temperature gradient is formed in the substrate, so that the fluctuation of current ratio attributable to temperature change is eliminated.
JP5348779A 1979-05-02 1979-05-02 Semiconductor device Pending JPS55146955A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5348779A JPS55146955A (en) 1979-05-02 1979-05-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5348779A JPS55146955A (en) 1979-05-02 1979-05-02 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55146955A true JPS55146955A (en) 1980-11-15

Family

ID=12944193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5348779A Pending JPS55146955A (en) 1979-05-02 1979-05-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55146955A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0358241A2 (en) * 1983-04-21 1990-03-14 WABCO GmbH Method of determining inductivity of an inductive sensor
CN102736717A (en) * 2011-03-31 2012-10-17 研祥智能科技股份有限公司 Wide temperature range control circuit and mainboard, and method for controlling wide temperature range of mainboard

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0358241A2 (en) * 1983-04-21 1990-03-14 WABCO GmbH Method of determining inductivity of an inductive sensor
CN102736717A (en) * 2011-03-31 2012-10-17 研祥智能科技股份有限公司 Wide temperature range control circuit and mainboard, and method for controlling wide temperature range of mainboard
CN102736717B (en) * 2011-03-31 2016-08-24 研祥智能科技股份有限公司 A kind of wide temperature control circuit and mainboard and the method controlling mainboard width temperature

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