JPS55142485A - Bipolar memory circuit - Google Patents

Bipolar memory circuit

Info

Publication number
JPS55142485A
JPS55142485A JP5027179A JP5027179A JPS55142485A JP S55142485 A JPS55142485 A JP S55142485A JP 5027179 A JP5027179 A JP 5027179A JP 5027179 A JP5027179 A JP 5027179A JP S55142485 A JPS55142485 A JP S55142485A
Authority
JP
Japan
Prior art keywords
write
transistors
emitter
digit line
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5027179A
Other languages
Japanese (ja)
Other versions
JPS622394B2 (en
Inventor
Michiyuki Hirata
Hideaki Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Eastern Japan Semiconductor Inc
Original Assignee
Hitachi Tokyo Electronics Co Ltd
Hitachi Ltd
Hitachi Ome Electronic Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Tokyo Electronics Co Ltd, Hitachi Ltd, Hitachi Ome Electronic Co Ltd filed Critical Hitachi Tokyo Electronics Co Ltd
Priority to JP5027179A priority Critical patent/JPS55142485A/en
Publication of JPS55142485A publication Critical patent/JPS55142485A/en
Publication of JPS622394B2 publication Critical patent/JPS622394B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuits 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To increase the write-in speed, by increasing the reference current on the digit line at write-in than that at readout, for the bipolar memory cell of emitter coupling. CONSTITUTION:When one of the transistors Q20, Q21 is ON in response to the write-in information, one of the transistors Q6, Q7 connected to the digit line is OFF, and since write-in/readout signal Vw130 is at low level, the current summing control signal VWBB is at high level. Accordingly, the transistors Q9, Q10 of the constant current circuit 2 of the digit line selected by the digit selection signal Vy are OFF, and transistors Q8, Q11 are ON, and the constant current IW added with the sum current IR flows to the selected digit line. As a result, the reference current at write-in fed to the emitter of the transistors Q1, Q2 of the bipolar memory cell 1 of emitter coupling selected via the word line is greater, the carrier stored in the emitter, clamp diodes D1, D2 is quickly eliminated, allowing to enable high speed write-in.
JP5027179A 1979-04-25 1979-04-25 Bipolar memory circuit Granted JPS55142485A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5027179A JPS55142485A (en) 1979-04-25 1979-04-25 Bipolar memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5027179A JPS55142485A (en) 1979-04-25 1979-04-25 Bipolar memory circuit

Publications (2)

Publication Number Publication Date
JPS55142485A true JPS55142485A (en) 1980-11-07
JPS622394B2 JPS622394B2 (en) 1987-01-19

Family

ID=12854280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5027179A Granted JPS55142485A (en) 1979-04-25 1979-04-25 Bipolar memory circuit

Country Status (1)

Country Link
JP (1) JPS55142485A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5870483A (en) * 1981-10-23 1983-04-26 Hitachi Ltd Semiconductor storage device
US4761766A (en) * 1985-09-19 1988-08-02 Siemens Aktiengesellschaft Read-write control for ECL memory

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0223091A (en) * 1988-07-07 1990-01-25 Victor Co Of Japan Ltd Brushless dc motor driving circuit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136839A (en) * 1974-09-24 1976-03-27 Fujitsu Ltd
JPS5161740A (en) * 1974-11-27 1976-05-28 Hitachi Ltd
JPS5215652A (en) * 1975-07-28 1977-02-05 Toshiba Machine Co Ltd Friction falseetwisting apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136839A (en) * 1974-09-24 1976-03-27 Fujitsu Ltd
JPS5161740A (en) * 1974-11-27 1976-05-28 Hitachi Ltd
JPS5215652A (en) * 1975-07-28 1977-02-05 Toshiba Machine Co Ltd Friction falseetwisting apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5870483A (en) * 1981-10-23 1983-04-26 Hitachi Ltd Semiconductor storage device
US4761766A (en) * 1985-09-19 1988-08-02 Siemens Aktiengesellschaft Read-write control for ECL memory

Also Published As

Publication number Publication date
JPS622394B2 (en) 1987-01-19

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