GB1319167A - Selector switching circuit arrangement for magnetic wire stores - Google Patents

Selector switching circuit arrangement for magnetic wire stores

Info

Publication number
GB1319167A
GB1319167A GB2161371A GB2161371A GB1319167A GB 1319167 A GB1319167 A GB 1319167A GB 2161371 A GB2161371 A GB 2161371A GB 2161371 A GB2161371 A GB 2161371A GB 1319167 A GB1319167 A GB 1319167A
Authority
GB
United Kingdom
Prior art keywords
transistors
supply line
emitters
switching circuit
circuit arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2161371A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1319167A publication Critical patent/GB1319167A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/602—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/64—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors having inductive loads
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/66—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will
    • H03K17/665—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only
    • H03K17/666—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only the output circuit comprising more than one controlled bipolar transistor
    • H03K17/668—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only the output circuit comprising more than one controlled bipolar transistor in a symmetrical configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electronic Switches (AREA)
  • Digital Magnetic Recording (AREA)

Abstract

1319167 Transistor gating circuits SIEMENS AG 19 April 1971 [11 Feb 1970] 21613/71 Heading H3T In a selector switching circuit for a magnetic store, a pair of transistors 1, 2 connected in antiparallel between a pair of switching terminals 3, 4, are controlled via further transistors 5, 6, the control signal 11 being applied directly to the bases of the control transistors, and also via diodes 9, 10 to their emitters. The collectors and bases of the control transistors 5, 6 are coupled via respective resistors 16, 17, 7, 8 to a positive supply line and, in the embodiment of Fig 1, the terminal 4 is connected via a resistor 18 to a negative supply line and also to a read amplifier Ri. In a modification, Fig. 2 (not shown), the negative supply line is connected to the emitters of further transistors 18, 19 which have their collectors connected to respective emitters of the transistors 1, 2, so that the control signals on transistors 1, 2 do not influence the potentials at terminals 3, 4. The circuit may be of integrated form.
GB2161371A 1970-02-11 1971-04-19 Selector switching circuit arrangement for magnetic wire stores Expired GB1319167A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702006166 DE2006166A1 (en) 1970-02-11 1970-02-11 Circuit arrangement of an integrable selector switch for magnet wire memory

Publications (1)

Publication Number Publication Date
GB1319167A true GB1319167A (en) 1973-06-06

Family

ID=5761976

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2161371A Expired GB1319167A (en) 1970-02-11 1971-04-19 Selector switching circuit arrangement for magnetic wire stores

Country Status (4)

Country Link
DE (1) DE2006166A1 (en)
FR (1) FR2078415A5 (en)
GB (1) GB1319167A (en)
NL (1) NL7101371A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2418548A (en) * 2004-09-23 2006-03-29 Zetex Plc Bipolar transistor switching circuit
US7245174B2 (en) 2004-09-23 2007-07-17 Zetex Plc Analogue switch

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2793940A1 (en) * 1999-05-18 2000-11-24 Koninkl Philips Electronics Nv LOW NOISE STORAGE DEVICE WITH HIGH SAMPLING FREQUENCY

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2418548A (en) * 2004-09-23 2006-03-29 Zetex Plc Bipolar transistor switching circuit
US7245174B2 (en) 2004-09-23 2007-07-17 Zetex Plc Analogue switch
GB2418548B (en) * 2004-09-23 2008-08-20 Zetex Plc Analogue switch

Also Published As

Publication number Publication date
DE2006166A1 (en) 1971-08-19
NL7101371A (en) 1971-08-13
FR2078415A5 (en) 1971-11-05

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees