JPS55140276A - Photovoltaic element - Google Patents

Photovoltaic element

Info

Publication number
JPS55140276A
JPS55140276A JP4846379A JP4846379A JPS55140276A JP S55140276 A JPS55140276 A JP S55140276A JP 4846379 A JP4846379 A JP 4846379A JP 4846379 A JP4846379 A JP 4846379A JP S55140276 A JPS55140276 A JP S55140276A
Authority
JP
Japan
Prior art keywords
film
solar battery
substrate
silicon
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4846379A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6210037B2 (enrdf_load_stackoverflow
Inventor
Nobuo Nakayama
Hitoshi Matsumoto
Akihiko Nakano
Seiji Ikegami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4846379A priority Critical patent/JPS55140276A/ja
Publication of JPS55140276A publication Critical patent/JPS55140276A/ja
Publication of JPS6210037B2 publication Critical patent/JPS6210037B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP4846379A 1979-04-18 1979-04-18 Photovoltaic element Granted JPS55140276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4846379A JPS55140276A (en) 1979-04-18 1979-04-18 Photovoltaic element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4846379A JPS55140276A (en) 1979-04-18 1979-04-18 Photovoltaic element

Publications (2)

Publication Number Publication Date
JPS55140276A true JPS55140276A (en) 1980-11-01
JPS6210037B2 JPS6210037B2 (enrdf_load_stackoverflow) 1987-03-04

Family

ID=12804056

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4846379A Granted JPS55140276A (en) 1979-04-18 1979-04-18 Photovoltaic element

Country Status (1)

Country Link
JP (1) JPS55140276A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2944142A1 (fr) * 2009-04-02 2010-10-08 Tile S Structure electronique a couche epitaxiee sur silicium fritte
CN102751364A (zh) * 2012-07-07 2012-10-24 蚌埠玻璃工业设计研究院 一种光伏电池用聚光玻璃球板

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5245868A (en) * 1975-10-08 1977-04-11 Agency Of Ind Science & Technol Process for production of plate-from silicone

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5245868A (en) * 1975-10-08 1977-04-11 Agency Of Ind Science & Technol Process for production of plate-from silicone

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2944142A1 (fr) * 2009-04-02 2010-10-08 Tile S Structure electronique a couche epitaxiee sur silicium fritte
WO2010112782A3 (fr) * 2009-04-02 2011-05-19 S'tile Structure electronique a couche epitaxiee sur silicium fritte
CN102751364A (zh) * 2012-07-07 2012-10-24 蚌埠玻璃工业设计研究院 一种光伏电池用聚光玻璃球板

Also Published As

Publication number Publication date
JPS6210037B2 (enrdf_load_stackoverflow) 1987-03-04

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