JPS55138252A - Method for division of semiconductor wafer - Google Patents

Method for division of semiconductor wafer

Info

Publication number
JPS55138252A
JPS55138252A JP4500079A JP4500079A JPS55138252A JP S55138252 A JPS55138252 A JP S55138252A JP 4500079 A JP4500079 A JP 4500079A JP 4500079 A JP4500079 A JP 4500079A JP S55138252 A JPS55138252 A JP S55138252A
Authority
JP
Japan
Prior art keywords
wafer
groove
division
30mum
residual
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4500079A
Other languages
Japanese (ja)
Inventor
Jihei Kawakami
Yoshiaki Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4500079A priority Critical patent/JPS55138252A/en
Publication of JPS55138252A publication Critical patent/JPS55138252A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Abstract

PURPOSE:To make automatic wafer cutting work by a method wherein a groove is made in such a way that the thickness of a residual wafer film is about 20-100mum, and it is separated by pressing it from the plane where the groove is formed, and linking between processes before and after the division is improved. CONSTITUTION:An adhesive sheet 12 is attached to the rear surface of an wafer, and a groove is provided so that the residual thickness of the wafer becomes about 30mum, then the wafer 11 is placed on a stand 14. By adding pressure via isolation paper 13 using a roller 15, the wafer is separated. When the adhesive sheet 12 is not used, then residual thickness is set to about 50-100mum. Since the width of the groove becomes 30mum or over if a blade dicer is used, the corners of elements do not touch each other even if pressure is added to them from the surface when the residual thickness of the wafer is about 30mum. This method makes it possible to smoothly link the processes before and after the division automatically.
JP4500079A 1979-04-13 1979-04-13 Method for division of semiconductor wafer Pending JPS55138252A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4500079A JPS55138252A (en) 1979-04-13 1979-04-13 Method for division of semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4500079A JPS55138252A (en) 1979-04-13 1979-04-13 Method for division of semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS55138252A true JPS55138252A (en) 1980-10-28

Family

ID=12707139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4500079A Pending JPS55138252A (en) 1979-04-13 1979-04-13 Method for division of semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS55138252A (en)

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