JPS55138071A - Gas phase growing method and device therefor - Google Patents
Gas phase growing method and device thereforInfo
- Publication number
- JPS55138071A JPS55138071A JP4687279A JP4687279A JPS55138071A JP S55138071 A JPS55138071 A JP S55138071A JP 4687279 A JP4687279 A JP 4687279A JP 4687279 A JP4687279 A JP 4687279A JP S55138071 A JPS55138071 A JP S55138071A
- Authority
- JP
- Japan
- Prior art keywords
- impurity
- gas
- guided
- pipe
- ionized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4687279A JPS6027749B2 (ja) | 1979-04-16 | 1979-04-16 | 気相成長方法および装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4687279A JPS6027749B2 (ja) | 1979-04-16 | 1979-04-16 | 気相成長方法および装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55138071A true JPS55138071A (en) | 1980-10-28 |
JPS6027749B2 JPS6027749B2 (ja) | 1985-07-01 |
Family
ID=12759431
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4687279A Expired JPS6027749B2 (ja) | 1979-04-16 | 1979-04-16 | 気相成長方法および装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6027749B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6774045B1 (ja) | 2019-03-13 | 2020-10-21 | 不二製油株式会社 | 油脂組成物 |
-
1979
- 1979-04-16 JP JP4687279A patent/JPS6027749B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS6027749B2 (ja) | 1985-07-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6448421A (en) | Ashing method | |
JPS5713174A (en) | Reactive sputtering method | |
JPS55138071A (en) | Gas phase growing method and device therefor | |
JPS57164986A (en) | Microwave plasma etching device | |
JPS56155100A (en) | Production of single crystal of ferrite | |
JPS6425420A (en) | Removal of resist and device therefor | |
JPS5645761A (en) | Plasma reaction apparatus | |
ES2056552T3 (es) | Calentamiento de substratos con descarga de arco de baja tension y campo magnetico variable. | |
JPS5790933A (en) | Manufacture of amorphous semiconductor film | |
JPS5298475A (en) | Plasma treating apparatus | |
JPS5694749A (en) | Plasma heaping device | |
JPS5710937A (en) | Plasma gaseous phase growth device | |
JPS5523085A (en) | Production of silicon film | |
JPS61180424A (ja) | 気相エピタキシヤル成長装置 | |
JPS55100204A (en) | Treating method for ozone generating liquid | |
JPS57157530A (en) | Forming method for insulator thin-film | |
JPS5688315A (en) | Apparatus for gaseous phase growth | |
JPS56147831A (en) | Modifying method of plastic surface | |
JPS539082A (en) | Gas exhausting device for fluorescent lamp | |
JPS5553415A (en) | Selective epitaxial growing | |
JPS57211239A (en) | Formation of insulating film | |
JPS54137973A (en) | Formation method of plasma nitride | |
JPS5591980A (en) | Plasma treating apparatus | |
JPS544571A (en) | Plasma treating apparatus | |
JPS5518077A (en) | Device for growing film under gas |