JPS5512576A - Integrated memory cell - Google Patents

Integrated memory cell

Info

Publication number
JPS5512576A
JPS5512576A JP8551878A JP8551878A JPS5512576A JP S5512576 A JPS5512576 A JP S5512576A JP 8551878 A JP8551878 A JP 8551878A JP 8551878 A JP8551878 A JP 8551878A JP S5512576 A JPS5512576 A JP S5512576A
Authority
JP
Japan
Prior art keywords
stored
memory cell
signal
potential
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8551878A
Other languages
English (en)
Inventor
Tadahide Takada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8551878A priority Critical patent/JPS5512576A/ja
Publication of JPS5512576A publication Critical patent/JPS5512576A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
JP8551878A 1978-07-12 1978-07-12 Integrated memory cell Pending JPS5512576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8551878A JPS5512576A (en) 1978-07-12 1978-07-12 Integrated memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8551878A JPS5512576A (en) 1978-07-12 1978-07-12 Integrated memory cell

Publications (1)

Publication Number Publication Date
JPS5512576A true JPS5512576A (en) 1980-01-29

Family

ID=13861119

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8551878A Pending JPS5512576A (en) 1978-07-12 1978-07-12 Integrated memory cell

Country Status (1)

Country Link
JP (1) JPS5512576A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5956295A (ja) * 1982-09-27 1984-03-31 Nec Corp ダイナミックメモリセル
JPS5956294A (ja) * 1982-09-27 1984-03-31 Nec Corp ダイナミックメモリセル
JPH02168492A (ja) * 1988-12-21 1990-06-28 Nec Corp ダイナミックｒａｍのメモリセル
US5329479A (en) * 1984-06-29 1994-07-12 Sharp Kabushiki Kaisha Dynamic semiconductor memories

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5956295A (ja) * 1982-09-27 1984-03-31 Nec Corp ダイナミックメモリセル
JPS5956294A (ja) * 1982-09-27 1984-03-31 Nec Corp ダイナミックメモリセル
JPH044680B2 (ja) * 1982-09-27 1992-01-29
JPH0410153B2 (ja) * 1982-09-27 1992-02-24
US5329479A (en) * 1984-06-29 1994-07-12 Sharp Kabushiki Kaisha Dynamic semiconductor memories
JPH02168492A (ja) * 1988-12-21 1990-06-28 Nec Corp ダイナミックｒａｍのメモリセル

Similar Documents

Publication Publication Date Title
US4573147A (en) Semiconductor memory device
JPS5619586A (en) Semiconductor memory unit
JPS5342633A (en) Voltage sense circuit of semiconductor memory device
GB1367058A (en) Memory circuit
JPS57109190A (en) Semiconductor storage device and its manufacture
JPS5661085A (en) Semiconductor memory device
US4380055A (en) Static RAM memory cell
KR880006698A (ko) 씨모오스 반도체 메모리장치의 입출력 회로
JPS5517869A (en) Semiconductor memory device
JPS5512576A (en) Integrated memory cell
JPS5625292A (en) Memory circuit
JPS5693178A (en) Semiconductor memory device
JPS5665396A (en) Semiconductor memory circuit
JPS5641593A (en) Semiconductor memory unit
JPS54158828A (en) Dynamic type semiconductor memory device
KR870007511A (ko) 데이타 판독회로
JPS54100233A (en) Integrated memory
JPS5512534A (en) Semiconductor memory unit
JPS5778695A (en) Semiconductor storage device
JPS57130285A (en) Static semiconductor memory
KR850008238A (ko) 반도체 기억장치
JPS55153194A (en) Integrated semiconductor memory unit
JPS56111188A (en) Semiconductor storage device
JPS57130291A (en) Semiconductor nonvolatile read-only storage device
JPS5611687A (en) Semiconductor memory unit