JPS55125665A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS55125665A
JPS55125665A JP3373879A JP3373879A JPS55125665A JP S55125665 A JPS55125665 A JP S55125665A JP 3373879 A JP3373879 A JP 3373879A JP 3373879 A JP3373879 A JP 3373879A JP S55125665 A JPS55125665 A JP S55125665A
Authority
JP
Japan
Prior art keywords
charge
wires
word
substrate
storage layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3373879A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6142868B2 (enrdf_load_stackoverflow
Inventor
Tadahide Takada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3373879A priority Critical patent/JPS55125665A/ja
Publication of JPS55125665A publication Critical patent/JPS55125665A/ja
Publication of JPS6142868B2 publication Critical patent/JPS6142868B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP3373879A 1979-03-22 1979-03-22 Semiconductor memory device Granted JPS55125665A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3373879A JPS55125665A (en) 1979-03-22 1979-03-22 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3373879A JPS55125665A (en) 1979-03-22 1979-03-22 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS55125665A true JPS55125665A (en) 1980-09-27
JPS6142868B2 JPS6142868B2 (enrdf_load_stackoverflow) 1986-09-24

Family

ID=12394740

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3373879A Granted JPS55125665A (en) 1979-03-22 1979-03-22 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS55125665A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0270463U (enrdf_load_stackoverflow) * 1988-11-16 1990-05-29

Also Published As

Publication number Publication date
JPS6142868B2 (enrdf_load_stackoverflow) 1986-09-24

Similar Documents

Publication Publication Date Title
TWI239632B (en) Semiconductor memory device
JPS55124259A (en) Semiconductor device
KR960032759A (ko) 메모리 장치
KR950002049A (ko) 반도체 기억장치
EP0238549B1 (en) Nonvolatile memory cell
EP0739016A3 (en) Non-volatile semiconductor memory device with block erase function
EP0616334A4 (en) REMANENT SEMICONDUCTOR MEMORY WITH FLOATING GRID.
KR900000916A (ko) 불휘발성 메모리 회로장치
US3590337A (en) Plural dielectric layered electrically alterable non-destructive readout memory element
US3549911A (en) Variable threshold level field effect memory device
KR890001099A (ko) 반도체 기억장치
JPS5718356A (en) Semiconductor memory storage
KR850002636A (ko) 전하전송형 전압증폭부를 가진 반도체 메모리
ES466564A1 (es) Un dispositivo semiconductor que tiene un elemento de memo- ria semiconductora
JPS55125665A (en) Semiconductor memory device
EP0377840A3 (en) Nonvolatile semiconductor memory device having reference potential generating circuit
HK45586A (en) Nonvolatile memory device
GB2011175A (en) Improvements in or relating to a semiconductor device
Sasaki et al. Charge pumping SOS-MOS transistor memory
US4426687A (en) Semiconductor memory device
JPS5828751B2 (ja) 半導体記憶装置
KR910001763A (ko) 반도체 비소멸성 메모리
SU440960A1 (ru) Элемент пам ти
JPS55125664A (en) Semiconductor integrated memory cell
JPS59135B2 (ja) 半導体記憶装置