JPS55118657A - Semiconductor rectifying element - Google Patents

Semiconductor rectifying element

Info

Publication number
JPS55118657A
JPS55118657A JP2560579A JP2560579A JPS55118657A JP S55118657 A JPS55118657 A JP S55118657A JP 2560579 A JP2560579 A JP 2560579A JP 2560579 A JP2560579 A JP 2560579A JP S55118657 A JPS55118657 A JP S55118657A
Authority
JP
Japan
Prior art keywords
groove
electrode
rough
open end
silicone rubber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2560579A
Other languages
Japanese (ja)
Other versions
JPS6117145B2 (en
Inventor
Yoshiharu Yotsumoto
Shuji Sugioka
Kazuo Sonoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2560579A priority Critical patent/JPS55118657A/en
Publication of JPS55118657A publication Critical patent/JPS55118657A/en
Publication of JPS6117145B2 publication Critical patent/JPS6117145B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To improve the adherence of a cup-shaped electrode with silicone rubber and durability thereof by forming a groove on the open end surface of the electrode and forming a rough plated layer in the groove. CONSTITUTION:After a cup-shaped electrode 11 is pressed, a groove 11d is pressed on the open end 11c. when a nickel plating layer 11b is formed by means of electrolytic plating process, rough nickel precipitate is produced on the groove 11d to become rough plated surface. An element pellet 2 is secured to the electrode 11, a rod-like electrode 3 is provided thereat, a silicon rubber 4 is filled in the electrode, and an open end is coated with the rubber. Thus, the silicone rubber is preferably adhered to the plated rough surface of the groove. Accordingly, it can prevent the separation of the silicone rubber from the groove to improve the durability thereof.
JP2560579A 1979-03-07 1979-03-07 Semiconductor rectifying element Granted JPS55118657A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2560579A JPS55118657A (en) 1979-03-07 1979-03-07 Semiconductor rectifying element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2560579A JPS55118657A (en) 1979-03-07 1979-03-07 Semiconductor rectifying element

Publications (2)

Publication Number Publication Date
JPS55118657A true JPS55118657A (en) 1980-09-11
JPS6117145B2 JPS6117145B2 (en) 1986-05-06

Family

ID=12170526

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2560579A Granted JPS55118657A (en) 1979-03-07 1979-03-07 Semiconductor rectifying element

Country Status (1)

Country Link
JP (1) JPS55118657A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007042900A (en) * 2005-08-04 2007-02-15 Denso Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007042900A (en) * 2005-08-04 2007-02-15 Denso Corp Semiconductor device

Also Published As

Publication number Publication date
JPS6117145B2 (en) 1986-05-06

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