JPS55117229A - Growing method of semiconductor at gas phase - Google Patents

Growing method of semiconductor at gas phase

Info

Publication number
JPS55117229A
JPS55117229A JP2445079A JP2445079A JPS55117229A JP S55117229 A JPS55117229 A JP S55117229A JP 2445079 A JP2445079 A JP 2445079A JP 2445079 A JP2445079 A JP 2445079A JP S55117229 A JPS55117229 A JP S55117229A
Authority
JP
Japan
Prior art keywords
gas
material gas
reaction furnace
furnace
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2445079A
Other languages
Japanese (ja)
Inventor
Takashi Aoyama
Takaya Suzuki
Hironori Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2445079A priority Critical patent/JPS55117229A/en
Publication of JPS55117229A publication Critical patent/JPS55117229A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To monitor gas-phase growth with high accuracy for a long time, by extracting a portion of a material gas in a reaction vessel which constitutes a gas- phase growing unit, measuring the quantity of the extracted gas and feedbacking the measured value to an auxiliary material gas supply quantity. CONSTITUTION:A high-frequency heating coil 7 is provided around a reaction furnace 1, one end of which is coupled to a reactant gas feeder 4 and a gas inlet pipe 5 and the other end of which is coupled to an outlet pipe 6. A heating jig 2, on which substrate wafers 3 are placed, and housed in the reaction furnace 1. A sampling capillary tube 8 is inserted into the downstream part of the reaction furnace through a flexible joint 9. A portion of a ractant gas is picked up and introduced into an analysis chamber 10 equipped with a diffusion pump 12 and an oil revolution pump 13. The introduced gas is then conducted to a controller 15 through a quadrupole mask 11. The result of analysis is applied to a microcomputer 16, which calculates the concentration of the material gas and feedbacks it to mass flow rate regulators 17a, 17b provided with material gas supplementing nozzles 18a, 18b to optimize the concentration of the gas in the furnace 1.
JP2445079A 1979-03-05 1979-03-05 Growing method of semiconductor at gas phase Pending JPS55117229A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2445079A JPS55117229A (en) 1979-03-05 1979-03-05 Growing method of semiconductor at gas phase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2445079A JPS55117229A (en) 1979-03-05 1979-03-05 Growing method of semiconductor at gas phase

Publications (1)

Publication Number Publication Date
JPS55117229A true JPS55117229A (en) 1980-09-09

Family

ID=12138483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2445079A Pending JPS55117229A (en) 1979-03-05 1979-03-05 Growing method of semiconductor at gas phase

Country Status (1)

Country Link
JP (1) JPS55117229A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132331A (en) * 1981-02-06 1982-08-16 Ricoh Co Ltd Chemical vapor deposition and device therefor
JPS5877224A (en) * 1981-11-02 1983-05-10 Hitachi Ltd Method for vapor growth
EP0085397A2 (en) * 1982-01-28 1983-08-10 Toshiba Kikai Kabushiki Kaisha Semiconductor vapor phase growing apparatus
US6077355A (en) * 1996-06-20 2000-06-20 Nec Corporation Apparatus and method for depositing a film on a substrate by chemical vapor deposition
JP2010510167A (en) * 2006-11-22 2010-04-02 エス．オー．アイ．テック シリコン オン インシュレータ テクノロジーズ Mass production equipment for III-V semiconductor materials
US8887650B2 (en) 2006-11-22 2014-11-18 Soitec Temperature-controlled purge gate valve for chemical vapor deposition chamber

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132331A (en) * 1981-02-06 1982-08-16 Ricoh Co Ltd Chemical vapor deposition and device therefor
JPS5877224A (en) * 1981-11-02 1983-05-10 Hitachi Ltd Method for vapor growth
JPH0324054B2 (en) * 1981-11-02 1991-04-02 Hitachi Ltd
EP0085397A2 (en) * 1982-01-28 1983-08-10 Toshiba Kikai Kabushiki Kaisha Semiconductor vapor phase growing apparatus
US6077355A (en) * 1996-06-20 2000-06-20 Nec Corporation Apparatus and method for depositing a film on a substrate by chemical vapor deposition
JP2010510167A (en) * 2006-11-22 2010-04-02 エス．オー．アイ．テック シリコン オン インシュレータ テクノロジーズ Mass production equipment for III-V semiconductor materials
KR101379410B1 (en) * 2006-11-22 2014-04-11 소이텍 Eqipment for high volume manufacture of group ⅲ-ⅴ semiconductor materials
US8887650B2 (en) 2006-11-22 2014-11-18 Soitec Temperature-controlled purge gate valve for chemical vapor deposition chamber

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