JPS5511177A - Refining method for primary silicon crystal in hyper- eutectoid aluminum-silicon alloy - Google Patents
Refining method for primary silicon crystal in hyper- eutectoid aluminum-silicon alloyInfo
- Publication number
- JPS5511177A JPS5511177A JP8434978A JP8434978A JPS5511177A JP S5511177 A JPS5511177 A JP S5511177A JP 8434978 A JP8434978 A JP 8434978A JP 8434978 A JP8434978 A JP 8434978A JP S5511177 A JPS5511177 A JP S5511177A
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- eutectoid
- hyper
- aluminum
- refining method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To refine effectively hyper-eutectoid Al-Si type alloy, by adding an Al-P alloy to the molten Al-Si alloy, and by melting and casting the mixture.
CONSTITUTION: To an Al-Si alloy contg. 12W25 % by weight of Si is added about 0.005W0.3 % Al-P alloy converted into P contg. up to 5 %, pref. 1W3 % P, and the mixture is melted. The molten metal is heated to a temp. about 660W800°C and cast by means of a mold etc. Cooling rate not lower than 0.5°C/sec., pref. 5W 100°C/sec. during solidification allows primary silicon layer to be refined effectively. Because casting can be performed at a low molten metal temp., castings of excellent mechanical properties or forgeability is manufactured.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8434978A JPS5511177A (en) | 1978-07-11 | 1978-07-11 | Refining method for primary silicon crystal in hyper- eutectoid aluminum-silicon alloy |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8434978A JPS5511177A (en) | 1978-07-11 | 1978-07-11 | Refining method for primary silicon crystal in hyper- eutectoid aluminum-silicon alloy |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5511177A true JPS5511177A (en) | 1980-01-25 |
Family
ID=13828030
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8434978A Pending JPS5511177A (en) | 1978-07-11 | 1978-07-11 | Refining method for primary silicon crystal in hyper- eutectoid aluminum-silicon alloy |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5511177A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5655532A (en) * | 1979-10-05 | 1981-05-16 | Masatoshi Tsuda | Manufacture of phosphorus-containing aluminum alloy for refining grain size of proeutectic si of hypereutectic a -si alloy and its using method |
CN109280823A (en) * | 2018-10-24 | 2019-01-29 | 辽宁工业大学 | A kind of preparation method of the rotten Phoral of hypereutectic al-si |
-
1978
- 1978-07-11 JP JP8434978A patent/JPS5511177A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5655532A (en) * | 1979-10-05 | 1981-05-16 | Masatoshi Tsuda | Manufacture of phosphorus-containing aluminum alloy for refining grain size of proeutectic si of hypereutectic a -si alloy and its using method |
CN109280823A (en) * | 2018-10-24 | 2019-01-29 | 辽宁工业大学 | A kind of preparation method of the rotten Phoral of hypereutectic al-si |
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