JPS55109294A - Crystal growth monitor device and method - Google Patents
Crystal growth monitor device and methodInfo
- Publication number
- JPS55109294A JPS55109294A JP344880A JP344880A JPS55109294A JP S55109294 A JPS55109294 A JP S55109294A JP 344880 A JP344880 A JP 344880A JP 344880 A JP344880 A JP 344880A JP S55109294 A JPS55109294 A JP S55109294A
- Authority
- JP
- Japan
- Prior art keywords
- crystal growth
- monitor device
- growth monitor
- crystal
- monitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
- Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/003,278 US4242589A (en) | 1979-01-15 | 1979-01-15 | Apparatus for monitoring crystal growth |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55109294A true JPS55109294A (en) | 1980-08-22 |
JPH0329753B2 JPH0329753B2 (ja) | 1991-04-25 |
Family
ID=21705049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP344880A Granted JPS55109294A (en) | 1979-01-15 | 1980-01-16 | Crystal growth monitor device and method |
Country Status (10)
Country | Link |
---|---|
US (1) | US4242589A (ja) |
JP (1) | JPS55109294A (ja) |
AU (1) | AU528708B2 (ja) |
CA (1) | CA1128172A (ja) |
DE (1) | DE3001259A1 (ja) |
FR (1) | FR2446333A1 (ja) |
GB (1) | GB2043482B (ja) |
IL (1) | IL59154A (ja) |
IN (1) | IN153555B (ja) |
NL (1) | NL8000251A (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2923240A1 (de) * | 1979-06-08 | 1980-12-18 | Leybold Heraeus Gmbh & Co Kg | Messverfahren und messanordnung fuer den durchmesser von einkristallen beim tiegelziehen |
FR2556109B2 (fr) * | 1983-08-29 | 1986-09-12 | Comp Generale Electricite | Dispositif pour deposer en regime continu une couche de silicium polycristallin sur un ruban de carbone |
FR2551233B1 (fr) * | 1983-08-29 | 1985-10-25 | Comp Generale Electricite | Dispositif pour deposer en regime continu une couche de silicium polycristallin sur un ruban de carbone |
US4944925A (en) * | 1985-06-10 | 1990-07-31 | Sumitomo Electric Industries, Ltd. | Apparatus for producing single crystals |
JPS63269003A (ja) * | 1987-04-27 | 1988-11-07 | Shin Etsu Handotai Co Ltd | 晶出界面位置検出装置 |
USRE34375E (en) * | 1987-05-05 | 1993-09-14 | Mobil Solar Energy Corporation | System for controlling apparatus for growing tubular crystalline bodies |
US4936947A (en) * | 1987-05-05 | 1990-06-26 | Mobil Solar Energy Corporation | System for controlling apparatus for growing tubular crystalline bodies |
JPS6483595A (en) * | 1987-09-25 | 1989-03-29 | Shinetsu Handotai Kk | Device for measuring crystal diameter |
JPH0774117B2 (ja) * | 1989-10-20 | 1995-08-09 | 信越半導体株式会社 | ヒータの温度パターン作成方法及びこの温度パターンを用いたSi単結晶育成制御装置 |
US5246535A (en) * | 1990-04-27 | 1993-09-21 | Nkk Corporation | Method and apparatus for controlling the diameter of a silicon single crystal |
FI911857A (fi) * | 1990-04-27 | 1991-10-28 | Nippon Kokan Kk | Foerfarande och apparat foer kontroll av diametern hos en enskild silikonkristall. |
US5882402A (en) * | 1997-09-30 | 1999-03-16 | Memc Electronic Materials, Inc. | Method for controlling growth of a silicon crystal |
DE102006041736A1 (de) | 2006-09-04 | 2008-03-20 | Schott Solar Gmbh | Verfahren und Anordnung zur Herstellung eines Rohres |
WO2012044909A1 (en) * | 2010-10-01 | 2012-04-05 | Evergreen Solar, Inc. | Sheet wafer defect mitigation |
CA2813432A1 (en) * | 2010-10-01 | 2012-04-05 | Evergreen Solar, Inc. | Sheet wafer processing as a function of wafer weight |
CN112281208B (zh) * | 2019-07-22 | 2022-04-05 | 隆基绿能科技股份有限公司 | 一种液口距确定方法、装置及单晶炉 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4850983A (ja) * | 1971-10-29 | 1973-07-18 | ||
JPS5127394A (ja) * | 1974-08-02 | 1976-03-06 | Hitachi Ltd |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3291650A (en) * | 1963-12-23 | 1966-12-13 | Gen Motors Corp | Control of crystal size |
US3870477A (en) * | 1972-07-10 | 1975-03-11 | Tyco Laboratories Inc | Optical control of crystal growth |
DE2349736A1 (de) * | 1973-10-03 | 1975-04-24 | Siemens Ag | Ueberwachungseinrichtung fuer eine vorrichtung zum ziehen von kristallen aus der schmelze |
US3958129A (en) * | 1974-08-05 | 1976-05-18 | Motorola, Inc. | Automatic crystal diameter control for growth of semiconductor crystals |
FR2310044A1 (fr) * | 1975-04-29 | 1976-11-26 | Commissariat Energie Atomique | Procede et dispositif d'isolement de figures dans une image |
US4059343A (en) * | 1976-02-26 | 1977-11-22 | The United States Of America As Represented By The Secretary Of The Air Force | Prismatic anamorphic system for optical correlators |
-
1979
- 1979-01-15 US US06/003,278 patent/US4242589A/en not_active Expired - Lifetime
-
1980
- 1980-01-14 FR FR8000734A patent/FR2446333A1/fr active Granted
- 1980-01-14 CA CA343,635A patent/CA1128172A/en not_active Expired
- 1980-01-15 IN IN23/DEL/80A patent/IN153555B/en unknown
- 1980-01-15 DE DE19803001259 patent/DE3001259A1/de active Granted
- 1980-01-15 GB GB8001238A patent/GB2043482B/en not_active Expired
- 1980-01-15 NL NL8000251A patent/NL8000251A/nl not_active Application Discontinuation
- 1980-01-16 JP JP344880A patent/JPS55109294A/ja active Granted
- 1980-01-18 IL IL59154A patent/IL59154A/xx unknown
- 1980-01-21 AU AU54786/80A patent/AU528708B2/en not_active Ceased
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4850983A (ja) * | 1971-10-29 | 1973-07-18 | ||
JPS5127394A (ja) * | 1974-08-02 | 1976-03-06 | Hitachi Ltd |
Also Published As
Publication number | Publication date |
---|---|
AU5478680A (en) | 1980-08-21 |
AU528708B2 (en) | 1983-05-12 |
JPH0329753B2 (ja) | 1991-04-25 |
IL59154A0 (en) | 1980-05-30 |
CA1128172A (en) | 1982-07-20 |
DE3001259A1 (de) | 1980-07-24 |
IN153555B (ja) | 1984-07-28 |
US4242589A (en) | 1980-12-30 |
FR2446333B1 (ja) | 1985-04-12 |
IL59154A (en) | 1982-12-31 |
DE3001259C2 (ja) | 1992-09-10 |
NL8000251A (nl) | 1980-07-17 |
GB2043482B (en) | 1982-12-08 |
FR2446333A1 (fr) | 1980-08-08 |
GB2043482A (en) | 1980-10-08 |
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