FR2551233B1 - Dispositif pour deposer en regime continu une couche de silicium polycristallin sur un ruban de carbone - Google Patents
Dispositif pour deposer en regime continu une couche de silicium polycristallin sur un ruban de carboneInfo
- Publication number
- FR2551233B1 FR2551233B1 FR8313834A FR8313834A FR2551233B1 FR 2551233 B1 FR2551233 B1 FR 2551233B1 FR 8313834 A FR8313834 A FR 8313834A FR 8313834 A FR8313834 A FR 8313834A FR 2551233 B1 FR2551233 B1 FR 2551233B1
- Authority
- FR
- France
- Prior art keywords
- silicon layer
- polycrystalline silicon
- carbon tape
- continuously depositing
- depositing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title 1
- 229910052799 carbon Inorganic materials 0.000 title 1
- 238000000151 deposition Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C3/00—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material
- B05C3/02—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material the work being immersed in the liquid or other fluent material
- B05C3/12—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material the work being immersed in the liquid or other fluent material for treating work of indefinite length
- B05C3/125—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material the work being immersed in the liquid or other fluent material for treating work of indefinite length the work being a web, band, strip or the like
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/007—Pulling on a substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
- H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8313834A FR2551233B1 (fr) | 1983-08-29 | 1983-08-29 | Dispositif pour deposer en regime continu une couche de silicium polycristallin sur un ruban de carbone |
FR8319212A FR2556109B2 (fr) | 1983-08-29 | 1983-12-01 | Dispositif pour deposer en regime continu une couche de silicium polycristallin sur un ruban de carbone |
CA000461389A CA1224026A (fr) | 1983-08-29 | 1984-08-20 | Dispositif pour deposer en regime continu une couche de silicium polycristallin sur un ruban de carbone |
EP84110062A EP0141114B1 (fr) | 1983-08-29 | 1984-08-23 | Dispositif pour déposer en régime continu une couche de silicium polycristallin sur un ruban de carbone |
AT84110062T ATE37449T1 (de) | 1983-08-29 | 1984-08-23 | Vorrichtung zum kontinuierlichen niederschlagen einer schicht aus polykristallinem silizium auf einem kohlenstoffband. |
DE8484110062T DE3474222D1 (en) | 1983-08-29 | 1984-08-23 | Apparatus for the continuous deposition of a polycrystalline silicon layer on a carbon ribbon |
JP59178202A JPS60108311A (ja) | 1983-08-29 | 1984-08-27 | 炭素リボン上に多結晶ケイ素層を連続的に堆積させるための装置 |
AU32469/84A AU564654B2 (en) | 1983-08-29 | 1984-08-28 | Coating |
US06/644,910 US4577588A (en) | 1983-08-29 | 1984-08-28 | Device for process-type deposition of polycrystalline silicon on carbon film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8313834A FR2551233B1 (fr) | 1983-08-29 | 1983-08-29 | Dispositif pour deposer en regime continu une couche de silicium polycristallin sur un ruban de carbone |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2551233A1 FR2551233A1 (fr) | 1985-03-01 |
FR2551233B1 true FR2551233B1 (fr) | 1985-10-25 |
Family
ID=9291853
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8313834A Expired FR2551233B1 (fr) | 1983-08-29 | 1983-08-29 | Dispositif pour deposer en regime continu une couche de silicium polycristallin sur un ruban de carbone |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS60108311A (fr) |
FR (1) | FR2551233B1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0291310U (fr) * | 1988-12-28 | 1990-07-19 | ||
NL1026043C2 (nl) * | 2004-04-26 | 2005-10-27 | Stichting Energie | Werkwijze en inrichting voor het fabriceren van metalen folies. |
FR3008329A1 (fr) * | 2013-07-11 | 2015-01-16 | Solarforce | Dispositif pour la formation d'une couche de silicium sur un ruban de carbone |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3730962A (en) * | 1971-08-24 | 1973-05-01 | Airco Inc | Electron beam furance with material-evaporant equilibrium control |
US3738312A (en) * | 1971-12-28 | 1973-06-12 | Bethlehem Steel Corp | Molten metal bath level maintenance system |
US3998598A (en) * | 1973-11-23 | 1976-12-21 | Semimetals, Inc. | Automatic diameter control for crystal growing facilities |
GB1532424A (en) * | 1975-09-15 | 1978-11-15 | Pilkington Brothers Ltd | Controlled method for the production of clad glass rod |
JPS5429843A (en) * | 1977-08-10 | 1979-03-06 | Nippon Steel Corp | Controlling method for composition and thickness of plated multicomponent alloy films |
US4217165A (en) * | 1978-04-28 | 1980-08-12 | Ciszek Theodore F | Method of growing a ribbon crystal particularly suited for facilitating automated control of ribbon width |
US4242589A (en) * | 1979-01-15 | 1980-12-30 | Mobil Tyco Solar Energy Corporation | Apparatus for monitoring crystal growth |
-
1983
- 1983-08-29 FR FR8313834A patent/FR2551233B1/fr not_active Expired
-
1984
- 1984-08-27 JP JP59178202A patent/JPS60108311A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6144803B2 (fr) | 1986-10-04 |
FR2551233A1 (fr) | 1985-03-01 |
JPS60108311A (ja) | 1985-06-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |