FR2446333A1 - Appareil et procede pour controler la croissance d'un corps cristallin - Google Patents
Appareil et procede pour controler la croissance d'un corps cristallinInfo
- Publication number
- FR2446333A1 FR2446333A1 FR8000734A FR8000734A FR2446333A1 FR 2446333 A1 FR2446333 A1 FR 2446333A1 FR 8000734 A FR8000734 A FR 8000734A FR 8000734 A FR8000734 A FR 8000734A FR 2446333 A1 FR2446333 A1 FR 2446333A1
- Authority
- FR
- France
- Prior art keywords
- image
- video display
- growth
- anamorphic
- meniscus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
- Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
L'appareil selon la présente invention comprend des moyens optiques 60 appropriés pour former une image du ménisque du corps 16, l'image étant anamorphe, de sorte que l'on peut visualiser la totalité du ménisque avec une bonne résolution à la fois dans le sens de la largeur et de la hauteur. L'appareil comprend aussi un moyen d'affichage vidéo pour afficher l'image anamorphe. L'affichage vidéo comprend un moyen pour augmenter le contraste entre toutes paires de points contrastantes de l'image. Le moyen d'affichage vidéo comprend aussi un dispositif d'établissement de moyenne de signaux pour faire la moyenne de l'intensité d'au moins une partie choisie préalablement de l'image. La valeur de l'intensité moyenne peut, à son tour, être utilisée pour commander la croissance du corps. L'appareil selon la présente invention permet également d'observer et de surveiller des processus multiples. Application : entre autres, croissance du silicium pour la fabrication des piles solaires.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/003,278 US4242589A (en) | 1979-01-15 | 1979-01-15 | Apparatus for monitoring crystal growth |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2446333A1 true FR2446333A1 (fr) | 1980-08-08 |
FR2446333B1 FR2446333B1 (fr) | 1985-04-12 |
Family
ID=21705049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8000734A Granted FR2446333A1 (fr) | 1979-01-15 | 1980-01-14 | Appareil et procede pour controler la croissance d'un corps cristallin |
Country Status (10)
Country | Link |
---|---|
US (1) | US4242589A (fr) |
JP (1) | JPS55109294A (fr) |
AU (1) | AU528708B2 (fr) |
CA (1) | CA1128172A (fr) |
DE (1) | DE3001259A1 (fr) |
FR (1) | FR2446333A1 (fr) |
GB (1) | GB2043482B (fr) |
IL (1) | IL59154A (fr) |
IN (1) | IN153555B (fr) |
NL (1) | NL8000251A (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2551233A1 (fr) * | 1983-08-29 | 1985-03-01 | Alsacienne Constr Mat Tex | Dispositif pour deposer en regime continu une couche de silicium polycristallin sur un ruban de carbone |
EP0141114A1 (fr) * | 1983-08-29 | 1985-05-15 | COMPAGNIE GENERALE D'ELECTRICITE Société anonyme dite: | Dispositif pour déposer en régime continu une couche de silicium polycristallin sur un ruban de carbone |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2923240A1 (de) * | 1979-06-08 | 1980-12-18 | Leybold Heraeus Gmbh & Co Kg | Messverfahren und messanordnung fuer den durchmesser von einkristallen beim tiegelziehen |
US4944925A (en) * | 1985-06-10 | 1990-07-31 | Sumitomo Electric Industries, Ltd. | Apparatus for producing single crystals |
JPS63269003A (ja) * | 1987-04-27 | 1988-11-07 | Shin Etsu Handotai Co Ltd | 晶出界面位置検出装置 |
USRE34375E (en) * | 1987-05-05 | 1993-09-14 | Mobil Solar Energy Corporation | System for controlling apparatus for growing tubular crystalline bodies |
US4936947A (en) * | 1987-05-05 | 1990-06-26 | Mobil Solar Energy Corporation | System for controlling apparatus for growing tubular crystalline bodies |
JPS6483595A (en) * | 1987-09-25 | 1989-03-29 | Shinetsu Handotai Kk | Device for measuring crystal diameter |
JPH0774117B2 (ja) * | 1989-10-20 | 1995-08-09 | 信越半導体株式会社 | ヒータの温度パターン作成方法及びこの温度パターンを用いたSi単結晶育成制御装置 |
US5246535A (en) * | 1990-04-27 | 1993-09-21 | Nkk Corporation | Method and apparatus for controlling the diameter of a silicon single crystal |
FI911857A (fi) * | 1990-04-27 | 1991-10-28 | Nippon Kokan Kk | Foerfarande och apparat foer kontroll av diametern hos en enskild silikonkristall. |
US5882402A (en) * | 1997-09-30 | 1999-03-16 | Memc Electronic Materials, Inc. | Method for controlling growth of a silicon crystal |
DE102006041736A1 (de) | 2006-09-04 | 2008-03-20 | Schott Solar Gmbh | Verfahren und Anordnung zur Herstellung eines Rohres |
CA2813432A1 (fr) * | 2010-10-01 | 2012-04-05 | Evergreen Solar, Inc. | Traitement de tranche de feuille en fonction d'un poids de tranche |
CN103228824A (zh) * | 2010-10-01 | 2013-07-31 | 盛时公司 | 片状晶圆缺陷减轻 |
CN112281208B (zh) * | 2019-07-22 | 2022-04-05 | 隆基绿能科技股份有限公司 | 一种液口距确定方法、装置及单晶炉 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3291650A (en) * | 1963-12-23 | 1966-12-13 | Gen Motors Corp | Control of crystal size |
JPS4850983A (fr) * | 1971-10-29 | 1973-07-18 | ||
US3870477A (en) * | 1972-07-10 | 1975-03-11 | Tyco Laboratories Inc | Optical control of crystal growth |
DE2349736A1 (de) * | 1973-10-03 | 1975-04-24 | Siemens Ag | Ueberwachungseinrichtung fuer eine vorrichtung zum ziehen von kristallen aus der schmelze |
JPS5424319B2 (fr) * | 1974-08-02 | 1979-08-20 | ||
US3958129A (en) * | 1974-08-05 | 1976-05-18 | Motorola, Inc. | Automatic crystal diameter control for growth of semiconductor crystals |
FR2310044A1 (fr) * | 1975-04-29 | 1976-11-26 | Commissariat Energie Atomique | Procede et dispositif d'isolement de figures dans une image |
US4059343A (en) * | 1976-02-26 | 1977-11-22 | The United States Of America As Represented By The Secretary Of The Air Force | Prismatic anamorphic system for optical correlators |
-
1979
- 1979-01-15 US US06/003,278 patent/US4242589A/en not_active Expired - Lifetime
-
1980
- 1980-01-14 CA CA343,635A patent/CA1128172A/fr not_active Expired
- 1980-01-14 FR FR8000734A patent/FR2446333A1/fr active Granted
- 1980-01-15 GB GB8001238A patent/GB2043482B/en not_active Expired
- 1980-01-15 DE DE19803001259 patent/DE3001259A1/de active Granted
- 1980-01-15 IN IN23/DEL/80A patent/IN153555B/en unknown
- 1980-01-15 NL NL8000251A patent/NL8000251A/nl not_active Application Discontinuation
- 1980-01-16 JP JP344880A patent/JPS55109294A/ja active Granted
- 1980-01-18 IL IL59154A patent/IL59154A/xx unknown
- 1980-01-21 AU AU54786/80A patent/AU528708B2/en not_active Ceased
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2551233A1 (fr) * | 1983-08-29 | 1985-03-01 | Alsacienne Constr Mat Tex | Dispositif pour deposer en regime continu une couche de silicium polycristallin sur un ruban de carbone |
EP0141114A1 (fr) * | 1983-08-29 | 1985-05-15 | COMPAGNIE GENERALE D'ELECTRICITE Société anonyme dite: | Dispositif pour déposer en régime continu une couche de silicium polycristallin sur un ruban de carbone |
Also Published As
Publication number | Publication date |
---|---|
JPS55109294A (en) | 1980-08-22 |
JPH0329753B2 (fr) | 1991-04-25 |
IN153555B (fr) | 1984-07-28 |
GB2043482B (en) | 1982-12-08 |
DE3001259A1 (de) | 1980-07-24 |
DE3001259C2 (fr) | 1992-09-10 |
GB2043482A (en) | 1980-10-08 |
IL59154A0 (en) | 1980-05-30 |
US4242589A (en) | 1980-12-30 |
FR2446333B1 (fr) | 1985-04-12 |
IL59154A (en) | 1982-12-31 |
NL8000251A (nl) | 1980-07-17 |
AU5478680A (en) | 1980-08-21 |
AU528708B2 (en) | 1983-05-12 |
CA1128172A (fr) | 1982-07-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name | ||
ST | Notification of lapse |