JPS55103726A - Electron beam line drawing device - Google Patents

Electron beam line drawing device

Info

Publication number
JPS55103726A
JPS55103726A JP1145279A JP1145279A JPS55103726A JP S55103726 A JPS55103726 A JP S55103726A JP 1145279 A JP1145279 A JP 1145279A JP 1145279 A JP1145279 A JP 1145279A JP S55103726 A JPS55103726 A JP S55103726A
Authority
JP
Japan
Prior art keywords
scanning
circuit
signal
electron beam
generating circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1145279A
Other languages
Japanese (ja)
Inventor
Masatoshi Utaka
Hisashi Sugiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP1145279A priority Critical patent/JPS55103726A/en
Publication of JPS55103726A publication Critical patent/JPS55103726A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To get just enough quantity of exposure and to avoid proximity effect, by dividing figure in plurality and changing scanning speed in every each figure, on electron beam equipment which draws minute pattern on electron sensitive resin film with electron beam. CONSTITUTION:Speed signal is inputted into scanning signal generating circuit 14 by signal line 16 which is designated the plural number of scanning speeds from calculating machine 12. Signal from counting machine 12 which designates figure via figure generating circuit 15 and D/A converting circuit 14 and selects scanning speed, is inputted into scanning signal generating circuit 14 and let make scanning of beam by deflecting circuit 5 subject to scanning speed which is responding to its figures. Beam is scanned from electron gun 1 to to-be-processed test material 3, which is set on testing material moving stand 4, via interrupting circuit 8 and deflecting circuit 5 and draws minute pattern.
JP1145279A 1979-02-05 1979-02-05 Electron beam line drawing device Pending JPS55103726A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1145279A JPS55103726A (en) 1979-02-05 1979-02-05 Electron beam line drawing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1145279A JPS55103726A (en) 1979-02-05 1979-02-05 Electron beam line drawing device

Publications (1)

Publication Number Publication Date
JPS55103726A true JPS55103726A (en) 1980-08-08

Family

ID=11778483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1145279A Pending JPS55103726A (en) 1979-02-05 1979-02-05 Electron beam line drawing device

Country Status (1)

Country Link
JP (1) JPS55103726A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5843516A (en) * 1981-09-08 1983-03-14 Fujitsu Ltd Exposure of electron beam
JPS5897830A (en) * 1981-11-30 1983-06-10 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Electron beam exposure device
JPS6286718A (en) * 1985-10-11 1987-04-21 Mitsubishi Electric Corp Electron beam exposure device
US5210696A (en) * 1989-02-10 1993-05-11 Fujitsu Limited Electron beam exposure data processing method, electron beam exposure method and apparatus

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5843516A (en) * 1981-09-08 1983-03-14 Fujitsu Ltd Exposure of electron beam
JPH0336292B2 (en) * 1981-09-08 1991-05-31 Fujitsu Ltd
JPS5897830A (en) * 1981-11-30 1983-06-10 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Electron beam exposure device
JPH039606B2 (en) * 1981-11-30 1991-02-08 Intaanashonaru Bijinesu Mashiinzu Corp
JPS6286718A (en) * 1985-10-11 1987-04-21 Mitsubishi Electric Corp Electron beam exposure device
US5210696A (en) * 1989-02-10 1993-05-11 Fujitsu Limited Electron beam exposure data processing method, electron beam exposure method and apparatus

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