JPS5510149B2 - - Google Patents
Info
- Publication number
- JPS5510149B2 JPS5510149B2 JP548076A JP548076A JPS5510149B2 JP S5510149 B2 JPS5510149 B2 JP S5510149B2 JP 548076 A JP548076 A JP 548076A JP 548076 A JP548076 A JP 548076A JP S5510149 B2 JPS5510149 B2 JP S5510149B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP548076A JPS5289478A (en) | 1976-01-22 | 1976-01-22 | Mos integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP548076A JPS5289478A (en) | 1976-01-22 | 1976-01-22 | Mos integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5289478A JPS5289478A (en) | 1977-07-27 |
| JPS5510149B2 true JPS5510149B2 (fr) | 1980-03-14 |
Family
ID=11612399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP548076A Granted JPS5289478A (en) | 1976-01-22 | 1976-01-22 | Mos integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5289478A (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5561055A (en) * | 1978-10-31 | 1980-05-08 | Nec Corp | Semiconductor device |
| JPS5651874A (en) * | 1979-10-05 | 1981-05-09 | Nec Corp | Semiconductor device |
| JPS57111065A (en) * | 1980-12-27 | 1982-07-10 | Seiko Epson Corp | Mos field effect type semiconductor circuit device |
| JPS61225852A (ja) * | 1985-03-30 | 1986-10-07 | Toshiba Corp | 半導体装置 |
-
1976
- 1976-01-22 JP JP548076A patent/JPS5289478A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5289478A (en) | 1977-07-27 |