JPS5484899A - Method of preparing silicon nitride - Google Patents
Method of preparing silicon nitrideInfo
- Publication number
- JPS5484899A JPS5484899A JP15168577A JP15168577A JPS5484899A JP S5484899 A JPS5484899 A JP S5484899A JP 15168577 A JP15168577 A JP 15168577A JP 15168577 A JP15168577 A JP 15168577A JP S5484899 A JPS5484899 A JP S5484899A
- Authority
- JP
- Japan
- Prior art keywords
- mixture
- die
- sio
- punch
- grain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
- C01B21/0685—Preparation by carboreductive nitridation
Abstract
PURPOSE: To accomplish production of Si3N4 through a discharge sintering of the mixture of powdered SiO2 and powdered C while N2 being penetrated thereinto.
CONSTITUTION: SiO2 and C is mixed evenly at a blending ratio of 1:2 by mole and about 10:4 by weight. The mixture fills between punches 6 and 7 within a die 1 and slightly compressed by a pressure of about 100 kg/cm2. For SiO2, quartz sand with a grain of less than 40μ is used and for C, petroleum coke with a grain of less than 20μ. N2 with a given pressure is inducted into a N2 gas tank 3 from a cylinder 20 and then, made to pass onto the side of a vaccum tank 2 and a die 1 through a porous graphite section 7b of a punch 7, a mixture 17 and a porous graphite section 6b of the punch 6 or the die 1. Under such a condition, with a switch 19 closed, the mixture is fed with a pulse-like current of AC and DC ranging from 200 to 2,000 Hz for discharging to form Si3N4. After the end of the reaction, increase of the compression pressure to about 0.4 to 1.0 T/cm2 makes the mass of Si3N4 closer.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52151685A JPS603033B2 (en) | 1977-12-19 | 1977-12-19 | Silicon nitride manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52151685A JPS603033B2 (en) | 1977-12-19 | 1977-12-19 | Silicon nitride manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5484899A true JPS5484899A (en) | 1979-07-06 |
JPS603033B2 JPS603033B2 (en) | 1985-01-25 |
Family
ID=15524009
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52151685A Expired JPS603033B2 (en) | 1977-12-19 | 1977-12-19 | Silicon nitride manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS603033B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0122897A2 (en) * | 1983-04-19 | 1984-10-24 | KemaNord AB | A process for the production of silicon nitride |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0424379U (en) * | 1990-06-20 | 1992-02-27 |
-
1977
- 1977-12-19 JP JP52151685A patent/JPS603033B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0122897A2 (en) * | 1983-04-19 | 1984-10-24 | KemaNord AB | A process for the production of silicon nitride |
Also Published As
Publication number | Publication date |
---|---|
JPS603033B2 (en) | 1985-01-25 |
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