JPS5479546A - Linear amplifier circuit - Google Patents

Linear amplifier circuit

Info

Publication number
JPS5479546A
JPS5479546A JP14679577A JP14679577A JPS5479546A JP S5479546 A JPS5479546 A JP S5479546A JP 14679577 A JP14679577 A JP 14679577A JP 14679577 A JP14679577 A JP 14679577A JP S5479546 A JPS5479546 A JP S5479546A
Authority
JP
Japan
Prior art keywords
amplifier
linear amplifier
circuit
input
vth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14679577A
Other languages
Japanese (ja)
Other versions
JPS588767B2 (en
Inventor
Yasoji Suzuki
Tetsuya Iida
Tsutomu Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP52146795A priority Critical patent/JPS588767B2/en
Priority to US05/965,475 priority patent/US4267517A/en
Priority to GB7847002A priority patent/GB2010038B/en
Priority to DE2853019A priority patent/DE2853019C3/en
Publication of JPS5479546A publication Critical patent/JPS5479546A/en
Publication of JPS588767B2 publication Critical patent/JPS588767B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/307—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in push-pull amplifiers
    • H03F1/308—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in push-pull amplifiers using MOSFET
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/3022—CMOS common source output SEPP amplifiers
    • H03F3/3023—CMOS common source output SEPP amplifiers with asymmetrical driving of the end stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45695—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedforward means
    • H03F3/45699—Measuring at the input circuit of the differential amplifier
    • H03F3/45717—Controlling the loading circuit of the differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45508—Indexing scheme relating to differential amplifiers the CSC comprising a voltage generating circuit as bias circuit for the CSC
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45684—Indexing scheme relating to differential amplifiers the LC comprising one or more buffers or driving stages not being of the emitter respectively source follower type, between the output of the dif amp and the output stage

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To make it possible to obtain a gain-improved linear amplifier circuit by enabling the circuit Vth (thereshold voltage) to vary following up an input DC level. CONSTITUTION:Regarding input V+ as the reference voltage of circuit Vth (threshold voltage) compensating circuit 4, the drain potential of transistor Tr Tr7 of differential amplifier 1 falls as the potential of V+ (=V-) rises and, in consequence, input bias voltage V01 of linear amplifier 2 decreases, so that amplifier 2 can be operated in the highest-gain region by lowering the DC level of output O1 of amplifier 2. Namely, in the case V+ (=V-) is increased, the drain potential of Tr Tr13 increases corresponding to the rise so as to lower the ON resistance of Tr Tr17, circuit Vth of linear amplifier 21 decreases, and at this time, Tr Tr4 and Tr5 become close to cut-off states to decrease Vo11, so that am plifier 21 will amplify the input at the maximum gain. Linear amplifier 22 at the next stage operates in the same way.
JP52146795A 1977-12-07 1977-12-07 linear amplifier circuit Expired JPS588767B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP52146795A JPS588767B2 (en) 1977-12-07 1977-12-07 linear amplifier circuit
US05/965,475 US4267517A (en) 1977-12-07 1978-12-01 Operational amplifier
GB7847002A GB2010038B (en) 1977-12-07 1978-12-04 Operational amplifier
DE2853019A DE2853019C3 (en) 1977-12-07 1978-12-07 Stabilized operational amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52146795A JPS588767B2 (en) 1977-12-07 1977-12-07 linear amplifier circuit

Publications (2)

Publication Number Publication Date
JPS5479546A true JPS5479546A (en) 1979-06-25
JPS588767B2 JPS588767B2 (en) 1983-02-17

Family

ID=15415701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52146795A Expired JPS588767B2 (en) 1977-12-07 1977-12-07 linear amplifier circuit

Country Status (1)

Country Link
JP (1) JPS588767B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6038907A (en) * 1983-07-05 1985-02-28 ナシヨナル・セミコンダクター・コーポレーシヨン Large swing cmos power amplifier

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50124562A (en) * 1974-01-25 1975-09-30
JPS5150553A (en) * 1974-10-29 1976-05-04 Tokyo Shibaura Electric Co fet zofukukairo
US4045747A (en) * 1976-06-25 1977-08-30 Rca Corporation Complementary field effect transistor amplifier

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50124562A (en) * 1974-01-25 1975-09-30
JPS5150553A (en) * 1974-10-29 1976-05-04 Tokyo Shibaura Electric Co fet zofukukairo
US4045747A (en) * 1976-06-25 1977-08-30 Rca Corporation Complementary field effect transistor amplifier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6038907A (en) * 1983-07-05 1985-02-28 ナシヨナル・セミコンダクター・コーポレーシヨン Large swing cmos power amplifier
JPH0669127B2 (en) * 1983-07-05 1994-08-31 ナシヨナル・セミコンダクター・コーポレーシヨン Large swing CMOS power amplifier

Also Published As

Publication number Publication date
JPS588767B2 (en) 1983-02-17

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