JPS5477583A - Semiconductor device and production of the same - Google Patents
Semiconductor device and production of the sameInfo
- Publication number
- JPS5477583A JPS5477583A JP14529577A JP14529577A JPS5477583A JP S5477583 A JPS5477583 A JP S5477583A JP 14529577 A JP14529577 A JP 14529577A JP 14529577 A JP14529577 A JP 14529577A JP S5477583 A JPS5477583 A JP S5477583A
- Authority
- JP
- Japan
- Prior art keywords
- center
- impurity
- circumference
- region
- high speed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Thyristors (AREA)
Abstract
PURPOSE: To make possible high speed operation by letting the region where impurity concentration distributions change from the center of the element toward the circumference be one of adjoining regions and increaing the injection efficiency of junctions from the center of the element toward the circumference.
CONSTITUTION: An SCR is the composite of pnp and npn transistors. When the sum of the current amplification factors α1 and α2 of the transistors becomes 1, the pnpn structure goes ON. It is easier to go ON as α1, α2 are larger. When the ratio of emitter resistance and base registance is increased, α increases. When the impurity distributions wherein impurity concentrations increase linearly for the distance (r) from the center of the element or increase linearly or sharply after the fixed value (r) are applied to a cathode region 3, α increases and the conducting region rapidly expands over the entire surface of the element and therefore the element may be turned ON at a high speed.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14529577A JPS5477583A (en) | 1977-12-02 | 1977-12-02 | Semiconductor device and production of the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14529577A JPS5477583A (en) | 1977-12-02 | 1977-12-02 | Semiconductor device and production of the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5477583A true JPS5477583A (en) | 1979-06-21 |
| JPS6113390B2 JPS6113390B2 (en) | 1986-04-12 |
Family
ID=15381830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14529577A Granted JPS5477583A (en) | 1977-12-02 | 1977-12-02 | Semiconductor device and production of the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5477583A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10788270B2 (en) | 2015-10-15 | 2020-09-29 | Nec Platforms, Ltd. | Cooling device |
-
1977
- 1977-12-02 JP JP14529577A patent/JPS5477583A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10788270B2 (en) | 2015-10-15 | 2020-09-29 | Nec Platforms, Ltd. | Cooling device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6113390B2 (en) | 1986-04-12 |
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