JPS5469968A - Transistor - Google Patents

Transistor

Info

Publication number
JPS5469968A
JPS5469968A JP13659777A JP13659777A JPS5469968A JP S5469968 A JPS5469968 A JP S5469968A JP 13659777 A JP13659777 A JP 13659777A JP 13659777 A JP13659777 A JP 13659777A JP S5469968 A JPS5469968 A JP S5469968A
Authority
JP
Japan
Prior art keywords
region
type
impurity concentration
emitter
carriers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13659777A
Other languages
Japanese (ja)
Inventor
Takao Emoto
Takashi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13659777A priority Critical patent/JPS5469968A/en
Publication of JPS5469968A publication Critical patent/JPS5469968A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To eliminate surface injection of carriers and obtain the transistor of an increased current amplification factor by etching the circumferential edge of its emitter region and forming the low impurity concentration region of the same conductivity type as that of the emitter in said portion.
CONSTITUTION: A P type base region 7 is formed in an N type collector region 10 and an emitter region 8 on N type in said base region. A low impurity concentration region 9 of N type is diffusion-formed in the recessed hole formed by etching the base region to a suitable depth from the circumferential edge part 8a of the emitter region 8 through photoetching. Since the emitter region 5 has a high impurity concentration and a low impurity concentration and 8a is formed in recessed form, controlling of carriers in the surface of a junction part J2 may be performed and the carriers having been inhibited are injected from the central part of the emitter region 8 to the junction part J2, whereby the current amplification factor may be increased.
COPYRIGHT: (C)1979,JPO&Japio
JP13659777A 1977-11-16 1977-11-16 Transistor Pending JPS5469968A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13659777A JPS5469968A (en) 1977-11-16 1977-11-16 Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13659777A JPS5469968A (en) 1977-11-16 1977-11-16 Transistor

Publications (1)

Publication Number Publication Date
JPS5469968A true JPS5469968A (en) 1979-06-05

Family

ID=15179009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13659777A Pending JPS5469968A (en) 1977-11-16 1977-11-16 Transistor

Country Status (1)

Country Link
JP (1) JPS5469968A (en)

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