JPS5477580A - Semiconductor device and production of the same - Google Patents
Semiconductor device and production of the sameInfo
- Publication number
- JPS5477580A JPS5477580A JP14526077A JP14526077A JPS5477580A JP S5477580 A JPS5477580 A JP S5477580A JP 14526077 A JP14526077 A JP 14526077A JP 14526077 A JP14526077 A JP 14526077A JP S5477580 A JPS5477580 A JP S5477580A
- Authority
- JP
- Japan
- Prior art keywords
- side faces
- substrate
- islands
- gate
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
- H10D30/6759—Silicon-on-sapphire [SOS] substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current
Landscapes
- Bipolar Transistors (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14526077A JPS5477580A (en) | 1977-12-02 | 1977-12-02 | Semiconductor device and production of the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14526077A JPS5477580A (en) | 1977-12-02 | 1977-12-02 | Semiconductor device and production of the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5477580A true JPS5477580A (en) | 1979-06-21 |
JPS6112395B2 JPS6112395B2 (enrdf_load_stackoverflow) | 1986-04-08 |
Family
ID=15381007
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14526077A Granted JPS5477580A (en) | 1977-12-02 | 1977-12-02 | Semiconductor device and production of the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5477580A (enrdf_load_stackoverflow) |
-
1977
- 1977-12-02 JP JP14526077A patent/JPS5477580A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6112395B2 (enrdf_load_stackoverflow) | 1986-04-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3766438A (en) | Planar dielectric isolated integrated circuits | |
GB1111438A (en) | Electrical connection through a body of semiconductor material | |
US3574010A (en) | Fabrication of metal insulator semiconductor field effect transistors | |
JPS5760851A (en) | Dielectric isolation of semiconductor integrated circuit | |
JPS5599744A (en) | Manufacture of semiconductor device | |
JPS6465873A (en) | Manufacture of semiconductor element | |
JPS5477580A (en) | Semiconductor device and production of the same | |
JPS56155531A (en) | Manufacture of semiconductor device | |
JPS5477579A (en) | Semiconductor device and production of the same | |
JPS54154966A (en) | Semiconductor electron device | |
JPS55110056A (en) | Semiconductor device | |
JPS57176767A (en) | Manufacture of semiconductor device | |
GB1504484A (en) | Semiconductor device and a method for manufacturing the same | |
EP0067738A3 (en) | Method of reducing encroachment in a semiconductor device | |
JPS5492074A (en) | Mis field effect transistor and its manufacture | |
JPS52117079A (en) | Preparation of semiconductor device | |
JPS647564A (en) | Formation of gate electrode of mos transistor | |
JPH01114080A (ja) | 薄膜トランジスタ | |
JPS5534445A (en) | Semiconductor luminous device | |
JPS56111217A (en) | Preparation of semiconductor device | |
JPS5799736A (en) | Fabrication of semiconductor substrate | |
JPS56158444A (en) | Manufacture of semiconductor integrated circuit | |
JPS5671978A (en) | Preparation method of semiconductor system | |
JPS5753958A (ja) | Handotaisochi | |
JPS6410647A (en) | Manufacture of semiconductor device |