JPS5477580A - Semiconductor device and production of the same - Google Patents

Semiconductor device and production of the same

Info

Publication number
JPS5477580A
JPS5477580A JP14526077A JP14526077A JPS5477580A JP S5477580 A JPS5477580 A JP S5477580A JP 14526077 A JP14526077 A JP 14526077A JP 14526077 A JP14526077 A JP 14526077A JP S5477580 A JPS5477580 A JP S5477580A
Authority
JP
Japan
Prior art keywords
side faces
substrate
islands
gate
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14526077A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6112395B2 (enrdf_load_stackoverflow
Inventor
Atsuo Nishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14526077A priority Critical patent/JPS5477580A/ja
Publication of JPS5477580A publication Critical patent/JPS5477580A/ja
Publication of JPS6112395B2 publication Critical patent/JPS6112395B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/6758Thin-film transistors [TFT] characterised by the insulating substrates
    • H10D30/6759Silicon-on-sapphire [SOS] substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/6704Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6706Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current 

Landscapes

  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
JP14526077A 1977-12-02 1977-12-02 Semiconductor device and production of the same Granted JPS5477580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14526077A JPS5477580A (en) 1977-12-02 1977-12-02 Semiconductor device and production of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14526077A JPS5477580A (en) 1977-12-02 1977-12-02 Semiconductor device and production of the same

Publications (2)

Publication Number Publication Date
JPS5477580A true JPS5477580A (en) 1979-06-21
JPS6112395B2 JPS6112395B2 (enrdf_load_stackoverflow) 1986-04-08

Family

ID=15381007

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14526077A Granted JPS5477580A (en) 1977-12-02 1977-12-02 Semiconductor device and production of the same

Country Status (1)

Country Link
JP (1) JPS5477580A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6112395B2 (enrdf_load_stackoverflow) 1986-04-08

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