JPS5469931A - Semiconductor amplifier circuit - Google Patents
Semiconductor amplifier circuitInfo
- Publication number
- JPS5469931A JPS5469931A JP13770977A JP13770977A JPS5469931A JP S5469931 A JPS5469931 A JP S5469931A JP 13770977 A JP13770977 A JP 13770977A JP 13770977 A JP13770977 A JP 13770977A JP S5469931 A JPS5469931 A JP S5469931A
- Authority
- JP
- Japan
- Prior art keywords
- potential
- transistors
- bla
- blb
- turn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4094—Bit-line management or control circuits
Abstract
PURPOSE:To prevent the high-potential level of a memory cell from becoming low by connecting bit lines only to gates of transistors. CONSTITUTION:With clock theta1 high, transistors T9, and T22 to T25 turn on to precharge bit lines BLa and BLb via T22 and T23 and to make BLa and BLb equal in potential. With theta2 high next, transistors T7 and T8 turn on to connect memory cell MC and dummy cell DM to BLa and BLb respectively and at this time, a difference in potential is generated between BLa and BLb. With theta3 high, trnsistors T26, T27, T11, and T12 turn on. Since there is the differnce in potential between BLa and BLb at this time, a difference in potential is generated between points G and F and, in consequence, the state is decided by transistors T13 and T14, so that the potential of a low-level bit line will be lewered by transistors T15 and T16.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13770977A JPS5469931A (en) | 1977-11-15 | 1977-11-15 | Semiconductor amplifier circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13770977A JPS5469931A (en) | 1977-11-15 | 1977-11-15 | Semiconductor amplifier circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5469931A true JPS5469931A (en) | 1979-06-05 |
Family
ID=15204979
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13770977A Pending JPS5469931A (en) | 1977-11-15 | 1977-11-15 | Semiconductor amplifier circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5469931A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6355796A (en) * | 1986-06-20 | 1988-03-10 | テキサス インスツルメンツ インコーポレイテツド | Cmos sensing amplification circuit |
-
1977
- 1977-11-15 JP JP13770977A patent/JPS5469931A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6355796A (en) * | 1986-06-20 | 1988-03-10 | テキサス インスツルメンツ インコーポレイテツド | Cmos sensing amplification circuit |
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