JPS5467476A - Level detecting switch circuit - Google Patents

Level detecting switch circuit

Info

Publication number
JPS5467476A
JPS5467476A JP13428477A JP13428477A JPS5467476A JP S5467476 A JPS5467476 A JP S5467476A JP 13428477 A JP13428477 A JP 13428477A JP 13428477 A JP13428477 A JP 13428477A JP S5467476 A JPS5467476 A JP S5467476A
Authority
JP
Japan
Prior art keywords
diode
transistor
level
constant voltage
becomes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13428477A
Other languages
Japanese (ja)
Inventor
Akio Arai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP13428477A priority Critical patent/JPS5467476A/en
Publication of JPS5467476A publication Critical patent/JPS5467476A/en
Pending legal-status Critical Current

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  • Measurement Of Current Or Voltage (AREA)

Abstract

PURPOSE: To obtain hysterisis characteristics, which are free from the influences from the constants of elements other than a transistor and first and second constant voltage diodes and from the temperature, by setting the conduction operation starting level of the transistor with the use of the first diode and by setting the inconduction operation starting level with the use of the second diode.
CONSTITUTION: When the level of input signals IN becomes higher than the Zenor level of a constant voltage diode Z1, this diode Z1 becomes conductive so that a base current begins flowing through a transistor Q1 and so that another transistor Q2 starts its operation to have its collector potential decreased. Then, another constant voltage diode Z2 becomes conductive, but the diode Z1 is turned inconductive so that the transistors Q1 and Q2 are rendered completely conductive. At the next step, the level of the signals IN is lowered to the Zenor level of the diode Z2, the diode Z2 becomes inconductive to lower the base current of the transistor Q1 so that the collector voltage of the transistor Q2 is raised and so that the two transistors are cut off by the positive feedback. The switch circuit thus constructed can easily set the hysterisis range, simply change it and improve the temperature characteristics it.
COPYRIGHT: (C)1979,JPO&Japio
JP13428477A 1977-11-09 1977-11-09 Level detecting switch circuit Pending JPS5467476A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13428477A JPS5467476A (en) 1977-11-09 1977-11-09 Level detecting switch circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13428477A JPS5467476A (en) 1977-11-09 1977-11-09 Level detecting switch circuit

Publications (1)

Publication Number Publication Date
JPS5467476A true JPS5467476A (en) 1979-05-30

Family

ID=15124676

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13428477A Pending JPS5467476A (en) 1977-11-09 1977-11-09 Level detecting switch circuit

Country Status (1)

Country Link
JP (1) JPS5467476A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57151869A (en) * 1981-02-17 1982-09-20 Burroughs Corp Threshold value detector circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57151869A (en) * 1981-02-17 1982-09-20 Burroughs Corp Threshold value detector circuit

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