JPS5460868A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS5460868A
JPS5460868A JP12726977A JP12726977A JPS5460868A JP S5460868 A JPS5460868 A JP S5460868A JP 12726977 A JP12726977 A JP 12726977A JP 12726977 A JP12726977 A JP 12726977A JP S5460868 A JPS5460868 A JP S5460868A
Authority
JP
Japan
Prior art keywords
layer
rating
increase
gate electrode
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12726977A
Other languages
Japanese (ja)
Other versions
JPS6118870B2 (en
Inventor
Arata Kimura
Hiroshi Fukui
Yoshio Terasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12726977A priority Critical patent/JPS5460868A/en
Publication of JPS5460868A publication Critical patent/JPS5460868A/en
Publication of JPS6118870B2 publication Critical patent/JPS6118870B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To increase the di/dt rating by providing the high resistance region to block the gate current detouring occurring in the currentpath withn the base layer between the gate electrode and its opposing emitter layer's edge.
CONSTITUTION: PN-junction J3 is caused with N-type emitter layer 5 and P-type base layer in order to form part of the thyristor of the PNPN-layer structure. Then the gate electrode is attached on the back of layer 6 with cathode electrode 2 attached on layer 5, and furthermore short emitter layer 9 is added to increase the dv/dt rating. In this constitution, gate electrode 3 and both-end part 61 of layer 6 are thinned to secure a high resistance there and in order to increase the di/dt rating without affecting the dv/dt rating. Thus, no concentration of the gate current occurs at that area due to part 61, and a wide region can be turned on along edge Q-R of layer 5. As a result, the di/dt rating can be increased
COPYRIGHT: (C)1979,JPO&Japio
JP12726977A 1977-10-25 1977-10-25 Thyristor Granted JPS5460868A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12726977A JPS5460868A (en) 1977-10-25 1977-10-25 Thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12726977A JPS5460868A (en) 1977-10-25 1977-10-25 Thyristor

Publications (2)

Publication Number Publication Date
JPS5460868A true JPS5460868A (en) 1979-05-16
JPS6118870B2 JPS6118870B2 (en) 1986-05-14

Family

ID=14955817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12726977A Granted JPS5460868A (en) 1977-10-25 1977-10-25 Thyristor

Country Status (1)

Country Link
JP (1) JPS5460868A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0686960U (en) * 1993-05-26 1994-12-20 フランスベッド株式会社 Product delivery slip

Also Published As

Publication number Publication date
JPS6118870B2 (en) 1986-05-14

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