JPS5460560A - High-frequency semincoductor device - Google Patents

High-frequency semincoductor device

Info

Publication number
JPS5460560A
JPS5460560A JP12675477A JP12675477A JPS5460560A JP S5460560 A JPS5460560 A JP S5460560A JP 12675477 A JP12675477 A JP 12675477A JP 12675477 A JP12675477 A JP 12675477A JP S5460560 A JPS5460560 A JP S5460560A
Authority
JP
Japan
Prior art keywords
diode
reduced
capacity
units
pair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12675477A
Other languages
Japanese (ja)
Other versions
JPS5719575B2 (en
Inventor
Yutaka Iwata
Seiichi Takahashi
Katsuzo Uenishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP12675477A priority Critical patent/JPS5460560A/en
Priority to US05/880,158 priority patent/US4220874A/en
Publication of JPS5460560A publication Critical patent/JPS5460560A/en
Publication of JPS5719575B2 publication Critical patent/JPS5719575B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a small-sized high-frequency semiconductor device by loading 4 units of the diode and 4 units of the capacity into the package symmetrically.
CONSTITUTION: A pair of diode 21a and 21b (D1, D2; D1', D2') plus a pair of capacity 22a and 22b (C1, C3; C1', c3') are provided on microwave terminals23aW 23c and earth terminal 24 and then connected (26) to DC bias terminals 25aW25d. These diodes and capacities are all formed on ceramic stbstrate 26a, being surrounded by the ceramic wall substance. With this structure, the soldering processes are reduced greatly, and more reduced with use of one chip containing two unit of the diode. Also, if the terminal width is formed so that it may function as the transmission line within the package, the parasitic inductance is reduced with increased rpreducibility of the characteristics. Thus, the fine adjustment is omitted, ennsuring a satisfactory miniature size
COPYRIGHT: (C)1979,JPO&Japio
JP12675477A 1977-02-15 1977-10-24 High-frequency semincoductor device Granted JPS5460560A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP12675477A JPS5460560A (en) 1977-10-24 1977-10-24 High-frequency semincoductor device
US05/880,158 US4220874A (en) 1977-02-15 1978-02-22 High frequency semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12675477A JPS5460560A (en) 1977-10-24 1977-10-24 High-frequency semincoductor device

Publications (2)

Publication Number Publication Date
JPS5460560A true JPS5460560A (en) 1979-05-16
JPS5719575B2 JPS5719575B2 (en) 1982-04-23

Family

ID=14943081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12675477A Granted JPS5460560A (en) 1977-02-15 1977-10-24 High-frequency semincoductor device

Country Status (1)

Country Link
JP (1) JPS5460560A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0710983A2 (en) * 1994-11-07 1996-05-08 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Bridge module

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0710983A2 (en) * 1994-11-07 1996-05-08 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Bridge module
EP0710983A3 (en) * 1994-11-07 1997-11-26 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Bridge module

Also Published As

Publication number Publication date
JPS5719575B2 (en) 1982-04-23

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