JPS5460560A - High-frequency semincoductor device - Google Patents
High-frequency semincoductor deviceInfo
- Publication number
- JPS5460560A JPS5460560A JP12675477A JP12675477A JPS5460560A JP S5460560 A JPS5460560 A JP S5460560A JP 12675477 A JP12675477 A JP 12675477A JP 12675477 A JP12675477 A JP 12675477A JP S5460560 A JPS5460560 A JP S5460560A
- Authority
- JP
- Japan
- Prior art keywords
- diode
- reduced
- capacity
- units
- pair
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To obtain a small-sized high-frequency semiconductor device by loading 4 units of the diode and 4 units of the capacity into the package symmetrically.
CONSTITUTION: A pair of diode 21a and 21b (D1, D2; D1', D2') plus a pair of capacity 22a and 22b (C1, C3; C1', c3') are provided on microwave terminals23aW 23c and earth terminal 24 and then connected (26) to DC bias terminals 25aW25d. These diodes and capacities are all formed on ceramic stbstrate 26a, being surrounded by the ceramic wall substance. With this structure, the soldering processes are reduced greatly, and more reduced with use of one chip containing two unit of the diode. Also, if the terminal width is formed so that it may function as the transmission line within the package, the parasitic inductance is reduced with increased rpreducibility of the characteristics. Thus, the fine adjustment is omitted, ennsuring a satisfactory miniature size
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12675477A JPS5460560A (en) | 1977-10-24 | 1977-10-24 | High-frequency semincoductor device |
US05/880,158 US4220874A (en) | 1977-02-15 | 1978-02-22 | High frequency semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12675477A JPS5460560A (en) | 1977-10-24 | 1977-10-24 | High-frequency semincoductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5460560A true JPS5460560A (en) | 1979-05-16 |
JPS5719575B2 JPS5719575B2 (en) | 1982-04-23 |
Family
ID=14943081
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12675477A Granted JPS5460560A (en) | 1977-02-15 | 1977-10-24 | High-frequency semincoductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5460560A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0710983A2 (en) * | 1994-11-07 | 1996-05-08 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Bridge module |
-
1977
- 1977-10-24 JP JP12675477A patent/JPS5460560A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0710983A2 (en) * | 1994-11-07 | 1996-05-08 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Bridge module |
EP0710983A3 (en) * | 1994-11-07 | 1997-11-26 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Bridge module |
Also Published As
Publication number | Publication date |
---|---|
JPS5719575B2 (en) | 1982-04-23 |
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