JPS5591152A - Semiconductor integrated circuit device for ultra high frequency - Google Patents

Semiconductor integrated circuit device for ultra high frequency

Info

Publication number
JPS5591152A
JPS5591152A JP16469478A JP16469478A JPS5591152A JP S5591152 A JPS5591152 A JP S5591152A JP 16469478 A JP16469478 A JP 16469478A JP 16469478 A JP16469478 A JP 16469478A JP S5591152 A JPS5591152 A JP S5591152A
Authority
JP
Japan
Prior art keywords
region
spacer
integrated circuit
high frequency
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16469478A
Other languages
Japanese (ja)
Inventor
Masafumi Shigaki
Takeshi Takano
Kinshiro Kosemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16469478A priority Critical patent/JPS5591152A/en
Publication of JPS5591152A publication Critical patent/JPS5591152A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Abstract

PURPOSE: To microminiaturize an ultra high frequency semiconductor integrated circuit device by installing a bypass capacitor in a lid of a housing being loaded on its upper portion to constant a laminated structure when a semiconductor module is loaded on a device substrate and provided with a bypass capacitor through a spacer.
CONSTITUTION: A semiconductor module 1 having an earth metallized region 15, a bypass terminal metallized region 16 and a terminal metallized region 17 is loaded through a frame 9 having a terminal 18 on an ultra high frequency semiconductor integrated circuit device substrate 2. Then, a spacer 18 having a metallized region 13 electrically contacting with the region 15 and a metallized region 14 electrically contacting with the region 16 is loaded on the module 1, and a frame 7 is arranged on the spacer 8. Then, a bypass capacitor 13 mounted underneath the housing lid 5 is arranged while being engaged within the frame 7. This capacitor 3 is provided on a ceramic substrate 6, an upper electrode 10 formed on the substrate 6 is contacted with the region 13 of the spacer 8, and a lower electrode 11 is contacted with the region 14 of the spacer 8 to thereby form an integral configuration.
COPYRIGHT: (C)1980,JPO&Japio
JP16469478A 1978-12-28 1978-12-28 Semiconductor integrated circuit device for ultra high frequency Pending JPS5591152A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16469478A JPS5591152A (en) 1978-12-28 1978-12-28 Semiconductor integrated circuit device for ultra high frequency

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16469478A JPS5591152A (en) 1978-12-28 1978-12-28 Semiconductor integrated circuit device for ultra high frequency

Publications (1)

Publication Number Publication Date
JPS5591152A true JPS5591152A (en) 1980-07-10

Family

ID=15798079

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16469478A Pending JPS5591152A (en) 1978-12-28 1978-12-28 Semiconductor integrated circuit device for ultra high frequency

Country Status (1)

Country Link
JP (1) JPS5591152A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4527185A (en) * 1981-01-12 1985-07-02 Avx Corporation Integrated circuit device and subassembly
US5049979A (en) * 1990-06-18 1991-09-17 Microelectronics And Computer Technology Corporation Combined flat capacitor and tab integrated circuit chip and method
US5214498A (en) * 1990-02-26 1993-05-25 Raytheon Company MMIC package and connector
US5325072A (en) * 1991-12-18 1994-06-28 Hitachi, Ltd. High-frequency power amplifier device and high-frequency module including the same
FR2758417A1 (en) * 1997-01-16 1998-07-17 Thomson Csf Production of housing for packaging microwave component, for PCB
US7115988B1 (en) * 2004-01-21 2006-10-03 Altera Corporation Bypass capacitor embedded flip chip package lid and stiffener

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4527185A (en) * 1981-01-12 1985-07-02 Avx Corporation Integrated circuit device and subassembly
US5214498A (en) * 1990-02-26 1993-05-25 Raytheon Company MMIC package and connector
US5049979A (en) * 1990-06-18 1991-09-17 Microelectronics And Computer Technology Corporation Combined flat capacitor and tab integrated circuit chip and method
US5325072A (en) * 1991-12-18 1994-06-28 Hitachi, Ltd. High-frequency power amplifier device and high-frequency module including the same
FR2758417A1 (en) * 1997-01-16 1998-07-17 Thomson Csf Production of housing for packaging microwave component, for PCB
US7115988B1 (en) * 2004-01-21 2006-10-03 Altera Corporation Bypass capacitor embedded flip chip package lid and stiffener

Similar Documents

Publication Publication Date Title
US4249196A (en) Integrated circuit module with integral capacitor
JPS53123074A (en) Semiconductor device
JPS6428930A (en) Semiconductor device
JPS5563840A (en) Semiconductor integrated device
JPS5591849A (en) Module for microwave device
JPS5591152A (en) Semiconductor integrated circuit device for ultra high frequency
JPS5231758A (en) Liquid display device
JPS5249094A (en) Gas detecting device
JPS5521154A (en) Ceramic package
JPS54133878A (en) Semiconductor device
JPS5662354A (en) Hybrid type semiconductor integrated circuit device
JPS57113261A (en) Semiconductor device
JPS5496366A (en) Semiconductor device
JPS5280798A (en) Electrical connection equipment for display substance
JPS574147A (en) Semiconductor device and its manufacturing process
GB1494653A (en) Charge coupled devices
JPS5521109A (en) Package for accommodating semiconductor parts
JPS5571053A (en) Circuit device
KR880003257Y1 (en) Vertical-three-terminal-hybrid-type oscillator case
JPS5582515A (en) Transistor amplifier
JPS54114981A (en) Zener semiconductor device
JPS57186805A (en) Integrated circuit for quartz oscillation
JPS5472966A (en) Electronic device
JPS5544755A (en) Semiconductor container
JPS57112056A (en) Semiconductor device