JPS5457974A - Thyristor with amplifying gate - Google Patents

Thyristor with amplifying gate

Info

Publication number
JPS5457974A
JPS5457974A JP12547577A JP12547577A JPS5457974A JP S5457974 A JPS5457974 A JP S5457974A JP 12547577 A JP12547577 A JP 12547577A JP 12547577 A JP12547577 A JP 12547577A JP S5457974 A JPS5457974 A JP S5457974A
Authority
JP
Japan
Prior art keywords
thyristor
area
auxiliary
layer
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12547577A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6142872B2 (enrdf_load_stackoverflow
Inventor
Do Nakagawa
Akira Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12547577A priority Critical patent/JPS5457974A/ja
Publication of JPS5457974A publication Critical patent/JPS5457974A/ja
Publication of JPS6142872B2 publication Critical patent/JPS6142872B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes

Landscapes

  • Thyristors (AREA)
JP12547577A 1977-10-18 1977-10-18 Thyristor with amplifying gate Granted JPS5457974A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12547577A JPS5457974A (en) 1977-10-18 1977-10-18 Thyristor with amplifying gate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12547577A JPS5457974A (en) 1977-10-18 1977-10-18 Thyristor with amplifying gate

Publications (2)

Publication Number Publication Date
JPS5457974A true JPS5457974A (en) 1979-05-10
JPS6142872B2 JPS6142872B2 (enrdf_load_stackoverflow) 1986-09-24

Family

ID=14910999

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12547577A Granted JPS5457974A (en) 1977-10-18 1977-10-18 Thyristor with amplifying gate

Country Status (1)

Country Link
JP (1) JPS5457974A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5832663U (ja) * 1981-08-27 1983-03-03 東洋電機製造株式会社 サイリスタのゲ−ト電極構造
EP0926740A3 (en) * 1997-12-23 1999-08-25 National University of Ireland, Cork A transient voltage suppressor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5832663U (ja) * 1981-08-27 1983-03-03 東洋電機製造株式会社 サイリスタのゲ−ト電極構造
EP0926740A3 (en) * 1997-12-23 1999-08-25 National University of Ireland, Cork A transient voltage suppressor

Also Published As

Publication number Publication date
JPS6142872B2 (enrdf_load_stackoverflow) 1986-09-24

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