JPS5457961A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5457961A
JPS5457961A JP12548277A JP12548277A JPS5457961A JP S5457961 A JPS5457961 A JP S5457961A JP 12548277 A JP12548277 A JP 12548277A JP 12548277 A JP12548277 A JP 12548277A JP S5457961 A JPS5457961 A JP S5457961A
Authority
JP
Japan
Prior art keywords
soldering
silver plating
chip
constitution
insulating material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12548277A
Other languages
Japanese (ja)
Inventor
Shigeki Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12548277A priority Critical patent/JPS5457961A/en
Publication of JPS5457961A publication Critical patent/JPS5457961A/en
Pending legal-status Critical Current

Links

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  • Die Bonding (AREA)

Abstract

PURPOSE: To produce a high-reliability device with a sure soldering and no insulation deterioration by subjecting only the soldering part of a chip to silver plating which gets wet well with a high-temperature solder.
CONSTITUTION: The metal part surface of TO-5 type base 5 is subjected to silver plating 15, and further,only soldering part 6 of the semiconductor chip is provided with silver plating 16 which gets wet well with a high-temperature solder. By this constitution, the soldering of the chip is ensured; and since the phenomenon of silver moving to the glass insulating material is not generated because of no silver plating in the metallic part contacting with glass insulating material 13, so that deterioration or short-circuit can be prevented
COPYRIGHT: (C)1979,JPO&Japio
JP12548277A 1977-10-18 1977-10-18 Semiconductor device Pending JPS5457961A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12548277A JPS5457961A (en) 1977-10-18 1977-10-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12548277A JPS5457961A (en) 1977-10-18 1977-10-18 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5457961A true JPS5457961A (en) 1979-05-10

Family

ID=14911171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12548277A Pending JPS5457961A (en) 1977-10-18 1977-10-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5457961A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10522596B2 (en) 2017-07-18 2019-12-31 Toshiba Memory Corporation Semiconductor storage device comprising resistance change film and method of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10522596B2 (en) 2017-07-18 2019-12-31 Toshiba Memory Corporation Semiconductor storage device comprising resistance change film and method of manufacturing the same

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