JPS545674A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS545674A JPS545674A JP7064277A JP7064277A JPS545674A JP S545674 A JPS545674 A JP S545674A JP 7064277 A JP7064277 A JP 7064277A JP 7064277 A JP7064277 A JP 7064277A JP S545674 A JPS545674 A JP S545674A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- breakdown
- circumference
- securing
- occur
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000015556 catabolic process Effects 0.000 abstract 2
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7064277A JPS545674A (en) | 1977-06-15 | 1977-06-15 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7064277A JPS545674A (en) | 1977-06-15 | 1977-06-15 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS545674A true JPS545674A (en) | 1979-01-17 |
JPS6136389B2 JPS6136389B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1986-08-18 |
Family
ID=13437495
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7064277A Granted JPS545674A (en) | 1977-06-15 | 1977-06-15 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS545674A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5555570A (en) * | 1978-09-15 | 1980-04-23 | Westinghouse Electric Corp | Power mosfet |
JPS6338262A (ja) * | 1986-08-01 | 1988-02-18 | Matsushita Electronics Corp | 電力用mos型電界効果トランジスタ |
JPS63282022A (ja) * | 1987-05-15 | 1988-11-18 | Hitachi Electronics Eng Co Ltd | ワ−ク搬送装置 |
JPH01290265A (ja) * | 1988-05-18 | 1989-11-22 | Fuji Electric Co Ltd | Mos型半導体装置 |
JPH0312970A (ja) * | 1989-06-12 | 1991-01-21 | Hitachi Ltd | 半導体装置 |
JP2002252350A (ja) * | 2000-08-30 | 2002-09-06 | Shindengen Electric Mfg Co Ltd | 電界効果トランジスタ |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51134076A (en) * | 1975-05-15 | 1976-11-20 | Sony Corp | Insultation gate-type field- effect transistor |
-
1977
- 1977-06-15 JP JP7064277A patent/JPS545674A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51134076A (en) * | 1975-05-15 | 1976-11-20 | Sony Corp | Insultation gate-type field- effect transistor |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5555570A (en) * | 1978-09-15 | 1980-04-23 | Westinghouse Electric Corp | Power mosfet |
JPS6338262A (ja) * | 1986-08-01 | 1988-02-18 | Matsushita Electronics Corp | 電力用mos型電界効果トランジスタ |
JPS63282022A (ja) * | 1987-05-15 | 1988-11-18 | Hitachi Electronics Eng Co Ltd | ワ−ク搬送装置 |
JPH01290265A (ja) * | 1988-05-18 | 1989-11-22 | Fuji Electric Co Ltd | Mos型半導体装置 |
JPH0312970A (ja) * | 1989-06-12 | 1991-01-21 | Hitachi Ltd | 半導体装置 |
JP2002252350A (ja) * | 2000-08-30 | 2002-09-06 | Shindengen Electric Mfg Co Ltd | 電界効果トランジスタ |
Also Published As
Publication number | Publication date |
---|---|
JPS6136389B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1986-08-18 |
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