JPS5452991A - Unijunction transistor and method of producing same - Google Patents

Unijunction transistor and method of producing same

Info

Publication number
JPS5452991A
JPS5452991A JP10236978A JP10236978A JPS5452991A JP S5452991 A JPS5452991 A JP S5452991A JP 10236978 A JP10236978 A JP 10236978A JP 10236978 A JP10236978 A JP 10236978A JP S5452991 A JPS5452991 A JP S5452991A
Authority
JP
Japan
Prior art keywords
producing same
unijunction transistor
unijunction
transistor
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10236978A
Other languages
Japanese (ja)
Other versions
JPS575062B2 (en
Inventor
Chiyou Chiyu Hin
Shien Edomondo San Ien
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS5452991A publication Critical patent/JPS5452991A/en
Publication of JPS575062B2 publication Critical patent/JPS575062B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/705—Double base diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
JP10236978A 1977-08-26 1978-08-24 Unijunction transistor and method of producing same Granted JPS5452991A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US82802877A 1977-08-26 1977-08-26

Publications (2)

Publication Number Publication Date
JPS5452991A true JPS5452991A (en) 1979-04-25
JPS575062B2 JPS575062B2 (en) 1982-01-28

Family

ID=25250748

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10236978A Granted JPS5452991A (en) 1977-08-26 1978-08-24 Unijunction transistor and method of producing same

Country Status (4)

Country Link
JP (1) JPS5452991A (en)
DE (1) DE2836796A1 (en)
FR (1) FR2401521A1 (en)
GB (1) GB1599230A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111509040A (en) * 2020-04-28 2020-08-07 复旦大学 Unijunction transistor based on silicon-on-insulator substrate and preparation method thereof

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6723768B2 (en) 2002-03-27 2004-04-20 Eastman Chemical Company Polyester/polycarbonate blends with reduced yellowness
US7118799B2 (en) 2002-11-22 2006-10-10 Eastman Chemical Company Thermoplastic article having a decorative material embedded therein
US20080085390A1 (en) 2006-10-04 2008-04-10 Ryan Thomas Neill Encapsulation of electrically energized articles
US9150006B2 (en) 2011-06-23 2015-10-06 Eastman Chemical Company Lamination process optimization utilizing neopentyl glycol-modified polyesters

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1076919A (en) * 1966-06-03 1967-07-26 Ibm Improvements in digital data stores
US3769693A (en) * 1971-07-16 1973-11-06 Martin Marietta Corp Process for preparing nuclear hardened semiconductor and microelectronic devices
US3840887A (en) * 1972-08-25 1974-10-08 Westinghouse Electric Corp Selective irradiation of gated semiconductor devices to control gate sensitivity
CA1006987A (en) * 1973-05-04 1977-03-15 Michael W. Cresswell Dynamic isolation of high density conductivity modulation states in integrated circuits
US4238761A (en) * 1975-05-27 1980-12-09 Westinghouse Electric Corp. Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111509040A (en) * 2020-04-28 2020-08-07 复旦大学 Unijunction transistor based on silicon-on-insulator substrate and preparation method thereof
CN111509040B (en) * 2020-04-28 2021-05-14 复旦大学 Unijunction transistor based on silicon-on-insulator substrate and preparation method thereof

Also Published As

Publication number Publication date
FR2401521B1 (en) 1984-07-13
JPS575062B2 (en) 1982-01-28
FR2401521A1 (en) 1979-03-23
GB1599230A (en) 1981-09-30
DE2836796A1 (en) 1979-03-08

Similar Documents

Publication Publication Date Title
JPS53121493A (en) Semiconductor and method of producing same
JPS52154957A (en) Seal and method of producing same
JPS52139389A (en) Selffmatching fet transistor and method of producing same
JPS53109757A (en) Slipper and method of producing same
JPS5323285A (en) Ic and method of producing same
JPS5377473A (en) Transistor and method of producing same
JPS5453861A (en) Semiconductor device and method of producing same
JPS53124093A (en) Photocell and method of producing same
JPS5442026A (en) Nonnradiation valve and method of producing same
JPS5456774A (en) Ic and method of producing same
JPS5478678A (en) Semiconductor and method of producing same
JPS53100785A (en) Device and method of producing same
JPS5390779A (en) Semiconductor and method of producing same
JPS5392782A (en) Method of producing pyridine and 33methylpyridine
JPS5452991A (en) Unijunction transistor and method of producing same
JPS5392781A (en) Method of producing 22methlpyridine and 33 methylpyridine
JPS531477A (en) Fet transistor and method of producing same
JPS5336186A (en) Nnchannel fet transistor and method of producing same
JPS53100784A (en) Semiconductor and method of producing same
JPS549154A (en) Forgeddjoint and method of forming same
JPS52148011A (en) Method of producing undecenal and said undecenal
JPS5491740A (en) Semiconductor apparatus and method of producing same
JPS5478985A (en) Semiconductor and method of producing same
YU42169B (en) Process for producing methoximethylesther of hetacephalexine and hetacephadroxile
JPS52150469A (en) Flowerpot and method of producing same