FR2401521A1 - PROCESS FOR MODIFYING THE ELECTRICAL CHARACTERISTICS OF UNIJUNCTION TRANSISTORS - Google Patents

PROCESS FOR MODIFYING THE ELECTRICAL CHARACTERISTICS OF UNIJUNCTION TRANSISTORS

Info

Publication number
FR2401521A1
FR2401521A1 FR7824639A FR7824639A FR2401521A1 FR 2401521 A1 FR2401521 A1 FR 2401521A1 FR 7824639 A FR7824639 A FR 7824639A FR 7824639 A FR7824639 A FR 7824639A FR 2401521 A1 FR2401521 A1 FR 2401521A1
Authority
FR
France
Prior art keywords
modifying
electrical characteristics
unijunction
unijunction transistors
unijunction transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7824639A
Other languages
French (fr)
Other versions
FR2401521B1 (en
Inventor
Hing Chow Chu
Yen Sheng Edmund Sun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2401521A1 publication Critical patent/FR2401521A1/en
Application granted granted Critical
Publication of FR2401521B1 publication Critical patent/FR2401521B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/705—Double base diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)

Abstract

Procédé permettant d'accroître le courant de vallée d'un transistor unijonction sans dégradation des autres caractéristiques. Il consiste à soumettre au moins la jonction émetteur-base de ce transistor unijonction 10 à un rayonnement 35 provoquant des défauts de réseau pendant un temps suffisamment long pour modifier le courant de vallée de ce transistor unijonction. Application aux transistors unijonctions.A method of increasing the valley current of a unijunction transistor without degrading other characteristics. It consists in subjecting at least the emitter-base junction of this unijunction transistor 10 to radiation 35 causing network faults for a time long enough to modify the valley current of this unijunction transistor. Application to unijunction transistors.

FR7824639A 1977-08-26 1978-08-25 PROCESS FOR MODIFYING THE ELECTRICAL CHARACTERISTICS OF UNIJUNCTION TRANSISTORS Granted FR2401521A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US82802877A 1977-08-26 1977-08-26

Publications (2)

Publication Number Publication Date
FR2401521A1 true FR2401521A1 (en) 1979-03-23
FR2401521B1 FR2401521B1 (en) 1984-07-13

Family

ID=25250748

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7824639A Granted FR2401521A1 (en) 1977-08-26 1978-08-25 PROCESS FOR MODIFYING THE ELECTRICAL CHARACTERISTICS OF UNIJUNCTION TRANSISTORS

Country Status (4)

Country Link
JP (1) JPS5452991A (en)
DE (1) DE2836796A1 (en)
FR (1) FR2401521A1 (en)
GB (1) GB1599230A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6723768B2 (en) 2002-03-27 2004-04-20 Eastman Chemical Company Polyester/polycarbonate blends with reduced yellowness
US7118799B2 (en) 2002-11-22 2006-10-10 Eastman Chemical Company Thermoplastic article having a decorative material embedded therein
US20080085390A1 (en) 2006-10-04 2008-04-10 Ryan Thomas Neill Encapsulation of electrically energized articles
US9150006B2 (en) 2011-06-23 2015-10-06 Eastman Chemical Company Lamination process optimization utilizing neopentyl glycol-modified polyesters
CN111509040B (en) * 2020-04-28 2021-05-14 复旦大学 Unijunction transistor based on silicon-on-insulator substrate and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1521035A (en) * 1966-06-03 1968-04-12 Ibm Uni-junction transistor storage cell
US3769693A (en) * 1971-07-16 1973-11-06 Martin Marietta Corp Process for preparing nuclear hardened semiconductor and microelectronic devices
FR2228300A1 (en) * 1973-05-04 1974-11-29 Westinghouse Electric Corp High speed, high carrier density switching in integrated circuit - involves inclusion of high frequency thyristors and rectifiers
FR2312859A1 (en) * 1975-05-27 1976-12-24 Westinghouse Electric Corp THYRISTOR INTEGRATED DOOR AMPLIFIER, WITH DISCONNECTION OF THE ASSISTED DOOR, AND METHOD FOR MANUFACTURING THIS THYRISTOR

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3840887A (en) * 1972-08-25 1974-10-08 Westinghouse Electric Corp Selective irradiation of gated semiconductor devices to control gate sensitivity

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1521035A (en) * 1966-06-03 1968-04-12 Ibm Uni-junction transistor storage cell
DE1524792A1 (en) * 1966-06-03 1972-04-20 Ibm Solid-state storage device for binary data
US3769693A (en) * 1971-07-16 1973-11-06 Martin Marietta Corp Process for preparing nuclear hardened semiconductor and microelectronic devices
FR2228300A1 (en) * 1973-05-04 1974-11-29 Westinghouse Electric Corp High speed, high carrier density switching in integrated circuit - involves inclusion of high frequency thyristors and rectifiers
FR2312859A1 (en) * 1975-05-27 1976-12-24 Westinghouse Electric Corp THYRISTOR INTEGRATED DOOR AMPLIFIER, WITH DISCONNECTION OF THE ASSISTED DOOR, AND METHOD FOR MANUFACTURING THIS THYRISTOR

Also Published As

Publication number Publication date
JPS5452991A (en) 1979-04-25
FR2401521B1 (en) 1984-07-13
JPS575062B2 (en) 1982-01-28
GB1599230A (en) 1981-09-30
DE2836796A1 (en) 1979-03-08

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Legal Events

Date Code Title Description
ST Notification of lapse