JPS575062B2 - - Google Patents
Info
- Publication number
- JPS575062B2 JPS575062B2 JP10236978A JP10236978A JPS575062B2 JP S575062 B2 JPS575062 B2 JP S575062B2 JP 10236978 A JP10236978 A JP 10236978A JP 10236978 A JP10236978 A JP 10236978A JP S575062 B2 JPS575062 B2 JP S575062B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/705—Double base diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US82802877A | 1977-08-26 | 1977-08-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5452991A JPS5452991A (en) | 1979-04-25 |
| JPS575062B2 true JPS575062B2 (en) | 1982-01-28 |
Family
ID=25250748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10236978A Granted JPS5452991A (en) | 1977-08-26 | 1978-08-24 | Unijunction transistor and method of producing same |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5452991A (en) |
| DE (1) | DE2836796A1 (en) |
| FR (1) | FR2401521A1 (en) |
| GB (1) | GB1599230A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6723768B2 (en) | 2002-03-27 | 2004-04-20 | Eastman Chemical Company | Polyester/polycarbonate blends with reduced yellowness |
| US7118799B2 (en) | 2002-11-22 | 2006-10-10 | Eastman Chemical Company | Thermoplastic article having a decorative material embedded therein |
| US20080085390A1 (en) | 2006-10-04 | 2008-04-10 | Ryan Thomas Neill | Encapsulation of electrically energized articles |
| US9150006B2 (en) | 2011-06-23 | 2015-10-06 | Eastman Chemical Company | Lamination process optimization utilizing neopentyl glycol-modified polyesters |
| CN111509040B (en) * | 2020-04-28 | 2021-05-14 | 复旦大学 | Unijunction transistor based on silicon-on-insulator substrate and preparation method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1076919A (en) * | 1966-06-03 | 1967-07-26 | Ibm | Improvements in digital data stores |
| US3769693A (en) * | 1971-07-16 | 1973-11-06 | Martin Marietta Corp | Process for preparing nuclear hardened semiconductor and microelectronic devices |
| US3840887A (en) * | 1972-08-25 | 1974-10-08 | Westinghouse Electric Corp | Selective irradiation of gated semiconductor devices to control gate sensitivity |
| CA1006987A (en) * | 1973-05-04 | 1977-03-15 | Michael W. Cresswell | Dynamic isolation of high density conductivity modulation states in integrated circuits |
| US4238761A (en) * | 1975-05-27 | 1980-12-09 | Westinghouse Electric Corp. | Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode |
-
1978
- 1978-05-18 GB GB2047878A patent/GB1599230A/en not_active Expired
- 1978-08-23 DE DE19782836796 patent/DE2836796A1/en not_active Ceased
- 1978-08-24 JP JP10236978A patent/JPS5452991A/en active Granted
- 1978-08-25 FR FR7824639A patent/FR2401521A1/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5452991A (en) | 1979-04-25 |
| FR2401521B1 (en) | 1984-07-13 |
| DE2836796A1 (en) | 1979-03-08 |
| GB1599230A (en) | 1981-09-30 |
| FR2401521A1 (en) | 1979-03-23 |