JPS544566A - Vapor phase growth method of semiconductor - Google Patents
Vapor phase growth method of semiconductorInfo
- Publication number
- JPS544566A JPS544566A JP7012377A JP7012377A JPS544566A JP S544566 A JPS544566 A JP S544566A JP 7012377 A JP7012377 A JP 7012377A JP 7012377 A JP7012377 A JP 7012377A JP S544566 A JPS544566 A JP S544566A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- vapor phase
- growth method
- phase growth
- voluminously
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To form epitaxial layers of a uniform thickness and concentration voluminously by providing partition plates along the flow in the space of the growth region of a reaction tube.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7012377A JPS544566A (en) | 1977-06-13 | 1977-06-13 | Vapor phase growth method of semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7012377A JPS544566A (en) | 1977-06-13 | 1977-06-13 | Vapor phase growth method of semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS544566A true JPS544566A (en) | 1979-01-13 |
Family
ID=13422452
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7012377A Pending JPS544566A (en) | 1977-06-13 | 1977-06-13 | Vapor phase growth method of semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS544566A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5334250A (en) * | 1989-11-02 | 1994-08-02 | Sharp Kabushiki Kaisha | Vapor deposition apparatus for using solid starting materials |
WO2011108640A1 (en) * | 2010-03-04 | 2011-09-09 | Jx日鉱日石金属株式会社 | Crystal growing apparatus, method for manufacturing nitride compound semiconductor crystal, and nitride compound semiconductor crystal |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4935153U (en) * | 1972-06-23 | 1974-03-28 | ||
JPS5060184A (en) * | 1973-09-21 | 1975-05-23 |
-
1977
- 1977-06-13 JP JP7012377A patent/JPS544566A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4935153U (en) * | 1972-06-23 | 1974-03-28 | ||
JPS5060184A (en) * | 1973-09-21 | 1975-05-23 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5334250A (en) * | 1989-11-02 | 1994-08-02 | Sharp Kabushiki Kaisha | Vapor deposition apparatus for using solid starting materials |
WO2011108640A1 (en) * | 2010-03-04 | 2011-09-09 | Jx日鉱日石金属株式会社 | Crystal growing apparatus, method for manufacturing nitride compound semiconductor crystal, and nitride compound semiconductor crystal |
JPWO2011108640A1 (en) * | 2010-03-04 | 2013-06-27 | Jx日鉱日石金属株式会社 | Crystal growth apparatus, method for producing nitride compound semiconductor crystal, and nitride compound semiconductor crystal |
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