JPS544566A - Vapor phase growth method of semiconductor - Google Patents

Vapor phase growth method of semiconductor

Info

Publication number
JPS544566A
JPS544566A JP7012377A JP7012377A JPS544566A JP S544566 A JPS544566 A JP S544566A JP 7012377 A JP7012377 A JP 7012377A JP 7012377 A JP7012377 A JP 7012377A JP S544566 A JPS544566 A JP S544566A
Authority
JP
Japan
Prior art keywords
semiconductor
vapor phase
growth method
phase growth
voluminously
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7012377A
Other languages
Japanese (ja)
Inventor
Kenichi Arai
Hiroshi Terao
Hisatsune Watanabe
Yasuo Seki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7012377A priority Critical patent/JPS544566A/en
Publication of JPS544566A publication Critical patent/JPS544566A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To form epitaxial layers of a uniform thickness and concentration voluminously by providing partition plates along the flow in the space of the growth region of a reaction tube.
JP7012377A 1977-06-13 1977-06-13 Vapor phase growth method of semiconductor Pending JPS544566A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7012377A JPS544566A (en) 1977-06-13 1977-06-13 Vapor phase growth method of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7012377A JPS544566A (en) 1977-06-13 1977-06-13 Vapor phase growth method of semiconductor

Publications (1)

Publication Number Publication Date
JPS544566A true JPS544566A (en) 1979-01-13

Family

ID=13422452

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7012377A Pending JPS544566A (en) 1977-06-13 1977-06-13 Vapor phase growth method of semiconductor

Country Status (1)

Country Link
JP (1) JPS544566A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5334250A (en) * 1989-11-02 1994-08-02 Sharp Kabushiki Kaisha Vapor deposition apparatus for using solid starting materials
WO2011108640A1 (en) * 2010-03-04 2011-09-09 Jx日鉱日石金属株式会社 Crystal growing apparatus, method for manufacturing nitride compound semiconductor crystal, and nitride compound semiconductor crystal

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4935153U (en) * 1972-06-23 1974-03-28
JPS5060184A (en) * 1973-09-21 1975-05-23

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4935153U (en) * 1972-06-23 1974-03-28
JPS5060184A (en) * 1973-09-21 1975-05-23

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5334250A (en) * 1989-11-02 1994-08-02 Sharp Kabushiki Kaisha Vapor deposition apparatus for using solid starting materials
WO2011108640A1 (en) * 2010-03-04 2011-09-09 Jx日鉱日石金属株式会社 Crystal growing apparatus, method for manufacturing nitride compound semiconductor crystal, and nitride compound semiconductor crystal
JPWO2011108640A1 (en) * 2010-03-04 2013-06-27 Jx日鉱日石金属株式会社 Crystal growth apparatus, method for producing nitride compound semiconductor crystal, and nitride compound semiconductor crystal

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