JPS5444476A - Method of stably surface treating semiconductor - Google Patents

Method of stably surface treating semiconductor

Info

Publication number
JPS5444476A
JPS5444476A JP10192278A JP10192278A JPS5444476A JP S5444476 A JPS5444476 A JP S5444476A JP 10192278 A JP10192278 A JP 10192278A JP 10192278 A JP10192278 A JP 10192278A JP S5444476 A JPS5444476 A JP S5444476A
Authority
JP
Japan
Prior art keywords
surface treating
treating semiconductor
stably surface
stably
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10192278A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6120132B2 (cg-RX-API-DMAC10.html
Inventor
Mohan Chiyatsuda Madan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron GmbH and Co KG
Original Assignee
Semikron GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron GmbH and Co KG filed Critical Semikron GmbH and Co KG
Publication of JPS5444476A publication Critical patent/JPS5444476A/ja
Publication of JPS6120132B2 publication Critical patent/JPS6120132B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W74/01—
    • H10W74/134—
    • H10W74/147—
    • H10P14/6306—
    • H10P14/6322—
    • H10P14/6929—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Glass Compositions (AREA)
JP10192278A 1977-09-03 1978-08-23 Method of stably surface treating semiconductor Granted JPS5444476A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2739762A DE2739762C2 (de) 1977-09-03 1977-09-03 Verfahren zur Passivierung von Halbleiterkörpern

Publications (2)

Publication Number Publication Date
JPS5444476A true JPS5444476A (en) 1979-04-07
JPS6120132B2 JPS6120132B2 (cg-RX-API-DMAC10.html) 1986-05-21

Family

ID=6018047

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10192278A Granted JPS5444476A (en) 1977-09-03 1978-08-23 Method of stably surface treating semiconductor

Country Status (8)

Country Link
US (1) US4202916A (cg-RX-API-DMAC10.html)
JP (1) JPS5444476A (cg-RX-API-DMAC10.html)
BR (1) BR7805571A (cg-RX-API-DMAC10.html)
CH (1) CH631291A5 (cg-RX-API-DMAC10.html)
DE (1) DE2739762C2 (cg-RX-API-DMAC10.html)
FR (1) FR2402303A1 (cg-RX-API-DMAC10.html)
GB (1) GB2003662B (cg-RX-API-DMAC10.html)
IT (1) IT1098444B (cg-RX-API-DMAC10.html)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2071411B (en) * 1980-03-07 1983-12-21 Philips Electronic Associated Passivating p-n junction devices
IN154896B (cg-RX-API-DMAC10.html) * 1980-07-10 1984-12-22 Westinghouse Electric Corp
JPS57120341A (en) * 1981-01-17 1982-07-27 Toshiba Corp Glass passivation semiconductor device
US4506435A (en) * 1981-07-27 1985-03-26 International Business Machines Corporation Method for forming recessed isolated regions
US4544576A (en) * 1981-07-27 1985-10-01 International Business Machines Corporation Deep dielectric isolation by fused glass
DE3247938A1 (de) * 1982-12-24 1984-07-05 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiterbauelement hoher sperrspannungsbelastbarkeit
US4515668A (en) * 1984-04-25 1985-05-07 Honeywell Inc. Method of forming a dielectric layer comprising a gettering material
FR2631488B1 (fr) * 1988-05-10 1990-07-27 Thomson Hybrides Microondes Circuit integre hyperfrequence de type planar, comportant au moins un composant mesa, et son procede de fabrication
US5176771A (en) * 1991-12-23 1993-01-05 Hughes Aircraft Company Multilayer ceramic tape substrate having cavities formed in the upper layer thereof and method of fabricating the same by printing and delamination
US5882986A (en) * 1998-03-30 1999-03-16 General Semiconductor, Inc. Semiconductor chips having a mesa structure provided by sawing
US20030066816A1 (en) * 2001-09-17 2003-04-10 Schultz Gary A. Uniform patterning for deep reactive ion etching
DE102006013076A1 (de) * 2006-03-22 2007-09-27 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleiterbauelement mit Passivierungsschicht und zugehöriges Herstellungsverfahren
US20100025809A1 (en) 2008-07-30 2010-02-04 Trion Technology, Inc. Integrated Circuit and Method of Forming Sealed Trench Junction Termination
US8163624B2 (en) * 2008-07-30 2012-04-24 Bowman Ronald R Discrete semiconductor device and method of forming sealed trench junction termination

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1522201A (fr) * 1961-07-06 1968-04-26 Procédé de fabrication de dispositifs semi-conducteurs à jonction
US3212921A (en) * 1961-09-29 1965-10-19 Ibm Method of forming a glass film on an object and the product produced thereby
US3303399A (en) * 1964-01-30 1967-02-07 Ibm Glasses for encapsulating semiconductor devices and resultant devices
US3546013A (en) * 1961-09-29 1970-12-08 Ibm Method of providing protective coverings for semiconductors
DE1260574B (de) * 1966-03-30 1968-02-08 Telefunken Patent Verfahren zur Herstellung von Glasschichten oder anderen Isolierschichten auf Substratoberflaechen
US3542572A (en) * 1968-06-24 1970-11-24 Corning Glass Works Germania-silica glasses
US3967310A (en) * 1968-10-09 1976-06-29 Hitachi, Ltd. Semiconductor device having controlled surface charges by passivation films formed thereon
DE1950780B2 (de) * 1968-10-09 1971-09-30 Halbleiteranordnung mit reduzierter oberflaechenladungs dichte
US3632434A (en) * 1969-01-21 1972-01-04 Jerald L Hutson Process for glass passivating silicon semiconductor junctions
GB1250099A (cg-RX-API-DMAC10.html) * 1969-04-14 1971-10-20
US3752701A (en) * 1970-07-27 1973-08-14 Gen Instrument Corp Glass for coating semiconductors, and semiconductor coated therewith
US3895127A (en) * 1974-04-19 1975-07-15 Rca Corp Method of selectively depositing glass on semiconductor devices
DE2548736C3 (de) * 1975-10-31 1978-05-18 Jenaer Glaswerk Schott & Gen., 6500 Mainz Composit-Passivierungsglas auf der Basis PbO-B2 Okskö-ab O3) m't einem thermischen Ausdehnungskoeffizienten (200-300 Grad C) zwischen 40 und 60 mal 10"7 / Grad C für Silicium-Halbleiterbauelemente mit Aufschmelztemperaturen von höchstens 600 Grad C
JPS5263160A (en) * 1975-11-20 1977-05-25 Toshitaka Yamagata Forming device for arc and annulus
FR2335951A1 (fr) * 1975-12-19 1977-07-15 Radiotechnique Compelec Dispositif semiconducteur a surface passivee et procede d'obtention de la structure de passivation
JPS535971A (en) * 1976-07-06 1978-01-19 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
IT1098444B (it) 1985-09-07
BR7805571A (pt) 1979-04-10
IT7827273A0 (it) 1978-09-01
GB2003662A (en) 1979-03-14
GB2003662B (en) 1982-02-24
DE2739762A1 (de) 1979-03-15
JPS6120132B2 (cg-RX-API-DMAC10.html) 1986-05-21
DE2739762C2 (de) 1982-12-02
FR2402303B1 (cg-RX-API-DMAC10.html) 1984-06-01
CH631291A5 (de) 1982-07-30
FR2402303A1 (fr) 1979-03-30
US4202916A (en) 1980-05-13

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