FR2402303B1 - - Google Patents
Info
- Publication number
- FR2402303B1 FR2402303B1 FR7824993A FR7824993A FR2402303B1 FR 2402303 B1 FR2402303 B1 FR 2402303B1 FR 7824993 A FR7824993 A FR 7824993A FR 7824993 A FR7824993 A FR 7824993A FR 2402303 B1 FR2402303 B1 FR 2402303B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10W74/01—
-
- H10W74/134—
-
- H10W74/147—
-
- H10P14/6306—
-
- H10P14/6322—
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- H10P14/6929—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2739762A DE2739762C2 (de) | 1977-09-03 | 1977-09-03 | Verfahren zur Passivierung von Halbleiterkörpern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2402303A1 FR2402303A1 (fr) | 1979-03-30 |
| FR2402303B1 true FR2402303B1 (cg-RX-API-DMAC10.html) | 1984-06-01 |
Family
ID=6018047
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7824993A Granted FR2402303A1 (fr) | 1977-09-03 | 1978-08-30 | Traitement de surface de stabilisation de corps semi-conducteurs |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4202916A (cg-RX-API-DMAC10.html) |
| JP (1) | JPS5444476A (cg-RX-API-DMAC10.html) |
| BR (1) | BR7805571A (cg-RX-API-DMAC10.html) |
| CH (1) | CH631291A5 (cg-RX-API-DMAC10.html) |
| DE (1) | DE2739762C2 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2402303A1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB2003662B (cg-RX-API-DMAC10.html) |
| IT (1) | IT1098444B (cg-RX-API-DMAC10.html) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2071411B (en) * | 1980-03-07 | 1983-12-21 | Philips Electronic Associated | Passivating p-n junction devices |
| IN154896B (cg-RX-API-DMAC10.html) * | 1980-07-10 | 1984-12-22 | Westinghouse Electric Corp | |
| JPS57120341A (en) * | 1981-01-17 | 1982-07-27 | Toshiba Corp | Glass passivation semiconductor device |
| US4506435A (en) * | 1981-07-27 | 1985-03-26 | International Business Machines Corporation | Method for forming recessed isolated regions |
| US4544576A (en) * | 1981-07-27 | 1985-10-01 | International Business Machines Corporation | Deep dielectric isolation by fused glass |
| DE3247938A1 (de) * | 1982-12-24 | 1984-07-05 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Halbleiterbauelement hoher sperrspannungsbelastbarkeit |
| US4515668A (en) * | 1984-04-25 | 1985-05-07 | Honeywell Inc. | Method of forming a dielectric layer comprising a gettering material |
| FR2631488B1 (fr) * | 1988-05-10 | 1990-07-27 | Thomson Hybrides Microondes | Circuit integre hyperfrequence de type planar, comportant au moins un composant mesa, et son procede de fabrication |
| US5176771A (en) * | 1991-12-23 | 1993-01-05 | Hughes Aircraft Company | Multilayer ceramic tape substrate having cavities formed in the upper layer thereof and method of fabricating the same by printing and delamination |
| US5882986A (en) * | 1998-03-30 | 1999-03-16 | General Semiconductor, Inc. | Semiconductor chips having a mesa structure provided by sawing |
| US20030066816A1 (en) * | 2001-09-17 | 2003-04-10 | Schultz Gary A. | Uniform patterning for deep reactive ion etching |
| DE102006013076A1 (de) * | 2006-03-22 | 2007-09-27 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleiterbauelement mit Passivierungsschicht und zugehöriges Herstellungsverfahren |
| US20100025809A1 (en) | 2008-07-30 | 2010-02-04 | Trion Technology, Inc. | Integrated Circuit and Method of Forming Sealed Trench Junction Termination |
| US8163624B2 (en) * | 2008-07-30 | 2012-04-24 | Bowman Ronald R | Discrete semiconductor device and method of forming sealed trench junction termination |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1522201A (fr) * | 1961-07-06 | 1968-04-26 | Procédé de fabrication de dispositifs semi-conducteurs à jonction | |
| US3212921A (en) * | 1961-09-29 | 1965-10-19 | Ibm | Method of forming a glass film on an object and the product produced thereby |
| US3303399A (en) * | 1964-01-30 | 1967-02-07 | Ibm | Glasses for encapsulating semiconductor devices and resultant devices |
| US3546013A (en) * | 1961-09-29 | 1970-12-08 | Ibm | Method of providing protective coverings for semiconductors |
| DE1260574B (de) * | 1966-03-30 | 1968-02-08 | Telefunken Patent | Verfahren zur Herstellung von Glasschichten oder anderen Isolierschichten auf Substratoberflaechen |
| US3542572A (en) * | 1968-06-24 | 1970-11-24 | Corning Glass Works | Germania-silica glasses |
| US3967310A (en) * | 1968-10-09 | 1976-06-29 | Hitachi, Ltd. | Semiconductor device having controlled surface charges by passivation films formed thereon |
| DE1950780B2 (de) * | 1968-10-09 | 1971-09-30 | Halbleiteranordnung mit reduzierter oberflaechenladungs dichte | |
| US3632434A (en) * | 1969-01-21 | 1972-01-04 | Jerald L Hutson | Process for glass passivating silicon semiconductor junctions |
| GB1250099A (cg-RX-API-DMAC10.html) * | 1969-04-14 | 1971-10-20 | ||
| US3752701A (en) * | 1970-07-27 | 1973-08-14 | Gen Instrument Corp | Glass for coating semiconductors, and semiconductor coated therewith |
| US3895127A (en) * | 1974-04-19 | 1975-07-15 | Rca Corp | Method of selectively depositing glass on semiconductor devices |
| DE2548736C3 (de) * | 1975-10-31 | 1978-05-18 | Jenaer Glaswerk Schott & Gen., 6500 Mainz | Composit-Passivierungsglas auf der Basis PbO-B2 Okskö-ab O3) m't einem thermischen Ausdehnungskoeffizienten (200-300 Grad C) zwischen 40 und 60 mal 10"7 / Grad C für Silicium-Halbleiterbauelemente mit Aufschmelztemperaturen von höchstens 600 Grad C |
| JPS5263160A (en) * | 1975-11-20 | 1977-05-25 | Toshitaka Yamagata | Forming device for arc and annulus |
| FR2335951A1 (fr) * | 1975-12-19 | 1977-07-15 | Radiotechnique Compelec | Dispositif semiconducteur a surface passivee et procede d'obtention de la structure de passivation |
| JPS535971A (en) * | 1976-07-06 | 1978-01-19 | Mitsubishi Electric Corp | Semiconductor device |
-
1977
- 1977-09-03 DE DE2739762A patent/DE2739762C2/de not_active Expired
-
1978
- 1978-08-04 CH CH833578A patent/CH631291A5/de not_active IP Right Cessation
- 1978-08-23 JP JP10192278A patent/JPS5444476A/ja active Granted
- 1978-08-25 US US05/936,885 patent/US4202916A/en not_active Expired - Lifetime
- 1978-08-28 BR BR7805571A patent/BR7805571A/pt unknown
- 1978-08-30 FR FR7824993A patent/FR2402303A1/fr active Granted
- 1978-09-01 IT IT27273/78A patent/IT1098444B/it active
- 1978-09-02 GB GB7835420A patent/GB2003662B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| IT1098444B (it) | 1985-09-07 |
| BR7805571A (pt) | 1979-04-10 |
| IT7827273A0 (it) | 1978-09-01 |
| GB2003662A (en) | 1979-03-14 |
| JPS5444476A (en) | 1979-04-07 |
| GB2003662B (en) | 1982-02-24 |
| DE2739762A1 (de) | 1979-03-15 |
| JPS6120132B2 (cg-RX-API-DMAC10.html) | 1986-05-21 |
| DE2739762C2 (de) | 1982-12-02 |
| CH631291A5 (de) | 1982-07-30 |
| FR2402303A1 (fr) | 1979-03-30 |
| US4202916A (en) | 1980-05-13 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |