JPS5443352B1 - - Google Patents

Info

Publication number
JPS5443352B1
JPS5443352B1 JP3507870A JP3507870A JPS5443352B1 JP S5443352 B1 JPS5443352 B1 JP S5443352B1 JP 3507870 A JP3507870 A JP 3507870A JP 3507870 A JP3507870 A JP 3507870A JP S5443352 B1 JPS5443352 B1 JP S5443352B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3507870A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5443352B1 publication Critical patent/JPS5443352B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • H10W20/484—
    • H10W72/019—
    • H10W72/536—
    • H10W72/59—
    • H10W72/934—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Bipolar Transistors (AREA)
  • Thermistors And Varistors (AREA)
JP3507870A 1969-04-25 1970-04-24 Pending JPS5443352B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US81918669A 1969-04-25 1969-04-25

Publications (1)

Publication Number Publication Date
JPS5443352B1 true JPS5443352B1 (enExample) 1979-12-19

Family

ID=25227434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3507870A Pending JPS5443352B1 (enExample) 1969-04-25 1970-04-24

Country Status (9)

Country Link
US (1) US3601888A (enExample)
JP (1) JPS5443352B1 (enExample)
BE (1) BE749485A (enExample)
DE (2) DE2019655C2 (enExample)
FR (1) FR2049078B1 (enExample)
GB (1) GB1317583A (enExample)
IE (1) IE33752B1 (enExample)
NL (1) NL174684C (enExample)
SE (1) SE365343B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4050966A (en) * 1968-12-20 1977-09-27 Siemens Aktiengesellschaft Method for the preparation of diffused silicon semiconductor components
US3919007A (en) * 1969-08-12 1975-11-11 Kogyo Gijutsuin Method of manufacturing a field-effect transistor
US3604986A (en) * 1970-03-17 1971-09-14 Bell Telephone Labor Inc High frequency transistors with shallow emitters
US3863334A (en) * 1971-03-08 1975-02-04 Motorola Inc Aluminum-zinc metallization
JPS567304B2 (enExample) * 1972-08-28 1981-02-17
US3909926A (en) * 1973-11-07 1975-10-07 Jearld L Hutson Method of fabricating a semiconductor diode having high voltage characteristics
JPS593421Y2 (ja) * 1979-05-31 1984-01-30 ソニー株式会社 テ−プカセツト
IE52791B1 (en) * 1980-11-05 1988-03-02 Fujitsu Ltd Semiconductor devices
US4490193A (en) * 1983-09-29 1984-12-25 International Business Machines Corporation Method for making diffusions into a substrate and electrical connections thereto using rare earth boride materials
US4481046A (en) * 1983-09-29 1984-11-06 International Business Machines Corporation Method for making diffusions into a substrate and electrical connections thereto using silicon containing rare earth hexaboride materials
JPS60220975A (ja) * 1984-04-18 1985-11-05 Toshiba Corp ＧａＡｓ電界効果トランジスタ及びその製造方法
US5075756A (en) * 1990-02-12 1991-12-24 At&T Bell Laboratories Low resistance contacts to semiconductor materials
US6225218B1 (en) * 1995-12-20 2001-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
US6885275B1 (en) * 1998-11-12 2005-04-26 Broadcom Corporation Multi-track integrated spiral inductor
KR100366046B1 (ko) * 2000-06-29 2002-12-27 삼성전자 주식회사 에벌란치 포토다이오드 제조방법
DE10315897B4 (de) * 2003-04-08 2005-03-10 Karlsruhe Forschzent Verfahren und Verwendung einer Vorrichtung zur Trennung von metallischen und halbleitenden Kohlenstoff-Nanoröhren
ATE451165T1 (de) * 2005-05-17 2009-12-15 Max Planck Gesellschaft Reinigung von materialien durch behandlung mit wasserstoffbasiertem plasma
US20080029854A1 (en) * 2006-08-03 2008-02-07 United Microelectronics Corp. Conductive shielding pattern and semiconductor structure with inductor device
US20140361407A1 (en) * 2013-06-05 2014-12-11 SCHMID Group Silicon material substrate doping method, structure and applications

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2817607A (en) * 1953-08-24 1957-12-24 Rca Corp Method of making semi-conductor bodies
US3169304A (en) * 1961-06-22 1965-02-16 Giannini Controls Corp Method of forming an ohmic semiconductor contact
US3206827A (en) * 1962-07-06 1965-09-21 Gen Instrument Corp Method of producing a semiconductor device
DE1514807B2 (de) * 1964-04-15 1971-09-02 Texas Instruments Inc., Dallas. Tex. (V.St.A.) Verfahren zum herstellen einer planaren halbleiteranordnung
US3382568A (en) * 1965-07-22 1968-05-14 Ibm Method for providing electrical connections to semiconductor devices
US3391035A (en) * 1965-08-20 1968-07-02 Westinghouse Electric Corp Method of making p-nu-junction devices by diffusion
DE1544273A1 (de) * 1965-12-13 1969-09-04 Siemens Ag Verfahren zum Eindiffundieren von aus der Gasphase dargebotenem Dotierungsmaterial in einen Halbleitergrundkristall
JPS556287B1 (enExample) * 1966-04-27 1980-02-15
FR1531539A (fr) * 1966-05-23 1968-07-05 Siemens Ag Procédé de fabrication d'un transistor
DE1564608B2 (de) * 1966-05-23 1976-11-18 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen eines transistors
US3403284A (en) * 1966-12-29 1968-09-24 Bell Telephone Labor Inc Target structure storage device using diode array

Also Published As

Publication number Publication date
DE7015061U (de) 1972-01-05
FR2049078A1 (enExample) 1971-03-26
US3601888A (en) 1971-08-31
IE33752B1 (en) 1974-10-16
DE2019655C2 (de) 1982-05-06
FR2049078B1 (enExample) 1974-05-03
IE33752L (en) 1970-10-25
NL174684C (nl) 1984-07-16
GB1317583A (en) 1973-05-23
NL7005888A (enExample) 1970-10-27
DE2019655A1 (de) 1970-11-12
BE749485A (fr) 1970-10-26
SE365343B (enExample) 1974-03-18

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