JPS5441870B2 - - Google Patents

Info

Publication number
JPS5441870B2
JPS5441870B2 JP11746472A JP11746472A JPS5441870B2 JP S5441870 B2 JPS5441870 B2 JP S5441870B2 JP 11746472 A JP11746472 A JP 11746472A JP 11746472 A JP11746472 A JP 11746472A JP S5441870 B2 JPS5441870 B2 JP S5441870B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11746472A
Other languages
Japanese (ja)
Other versions
JPS4975270A (xx
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP11746472A priority Critical patent/JPS5441870B2/ja
Priority to FR7341234A priority patent/FR2208191B1/fr
Priority to DE19732357913 priority patent/DE2357913B2/de
Priority to GB5435573A priority patent/GB1410728A/en
Publication of JPS4975270A publication Critical patent/JPS4975270A/ja
Priority to US05/622,862 priority patent/US4026742A/en
Publication of JPS5441870B2 publication Critical patent/JPS5441870B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
JP11746472A 1972-11-22 1972-11-22 Expired JPS5441870B2 (xx)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP11746472A JPS5441870B2 (xx) 1972-11-22 1972-11-22
FR7341234A FR2208191B1 (xx) 1972-11-22 1973-11-20
DE19732357913 DE2357913B2 (de) 1972-11-22 1973-11-20 Verfahren zum herstellen von elektroden oder von einer verdrahtung auf einer halbleiteranordnung
GB5435573A GB1410728A (en) 1972-11-22 1973-11-22 Etching methods to their application and to devices produced thereby
US05/622,862 US4026742A (en) 1972-11-22 1975-10-16 Plasma etching process for making a microcircuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11746472A JPS5441870B2 (xx) 1972-11-22 1972-11-22

Publications (2)

Publication Number Publication Date
JPS4975270A JPS4975270A (xx) 1974-07-19
JPS5441870B2 true JPS5441870B2 (xx) 1979-12-11

Family

ID=14712315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11746472A Expired JPS5441870B2 (xx) 1972-11-22 1972-11-22

Country Status (4)

Country Link
JP (1) JPS5441870B2 (xx)
DE (1) DE2357913B2 (xx)
FR (1) FR2208191B1 (xx)
GB (1) GB1410728A (xx)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180102174A (ko) 2016-02-22 2018-09-14 가부시키가이샤 고베 세이코쇼 용접용 Ni기 합금 솔리드 와이어 및 Ni기 합금 용접 금속

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5127833A (ja) * 1974-09-02 1976-03-09 Nippon Telegraph & Telephone Chitaniumunoshokukokuhoho
JPS5190274A (en) * 1975-02-05 1976-08-07 Fuotomasukuno seizohoho
US3994793A (en) * 1975-05-22 1976-11-30 International Business Machines Corporation Reactive ion etching of aluminum
JPS5287985A (en) * 1976-01-19 1977-07-22 Mitsubishi Electric Corp Plasma etching method
JPS5325244A (en) * 1976-08-20 1978-03-08 Nichiden Varian Kk Method of plasma etching molybdenum
US4211601A (en) * 1978-07-31 1980-07-08 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
JPS5679449A (en) * 1979-11-30 1981-06-30 Mitsubishi Electric Corp Production of semiconductor device
JP3526651B2 (ja) * 1995-04-28 2004-05-17 ローム株式会社 半導体装置および配線方法
US5973342A (en) * 1996-04-25 1999-10-26 Rohm Co., Ltd. Semiconductor device having an iridium electrode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180102174A (ko) 2016-02-22 2018-09-14 가부시키가이샤 고베 세이코쇼 용접용 Ni기 합금 솔리드 와이어 및 Ni기 합금 용접 금속

Also Published As

Publication number Publication date
FR2208191A1 (xx) 1974-06-21
GB1410728A (en) 1975-10-22
JPS4975270A (xx) 1974-07-19
FR2208191B1 (xx) 1978-11-10
DE2357913A1 (de) 1974-05-30
DE2357913B2 (de) 1976-06-24

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