JPS5428252B2 - - Google Patents
Info
- Publication number
- JPS5428252B2 JPS5428252B2 JP5978375A JP5978375A JPS5428252B2 JP S5428252 B2 JPS5428252 B2 JP S5428252B2 JP 5978375 A JP5978375 A JP 5978375A JP 5978375 A JP5978375 A JP 5978375A JP S5428252 B2 JPS5428252 B2 JP S5428252B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
- H10D84/813—Combinations of field-effect devices and capacitor only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2431079A DE2431079C3 (de) | 1974-06-28 | 1974-06-28 | Dynamischer Halbleiterspeicher mit Zwei-Transistor-Speicherelementen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS513824A JPS513824A (enrdf_load_stackoverflow) | 1976-01-13 |
| JPS5428252B2 true JPS5428252B2 (enrdf_load_stackoverflow) | 1979-09-14 |
Family
ID=5919184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5978375A Expired JPS5428252B2 (enrdf_load_stackoverflow) | 1974-06-28 | 1975-05-21 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5428252B2 (enrdf_load_stackoverflow) |
| CH (1) | CH581885A5 (enrdf_load_stackoverflow) |
| DE (1) | DE2431079C3 (enrdf_load_stackoverflow) |
| FR (1) | FR2276659A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1502334A (enrdf_load_stackoverflow) |
| IT (1) | IT1038100B (enrdf_load_stackoverflow) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5853512B2 (ja) * | 1976-02-13 | 1983-11-29 | 株式会社東芝 | 半導体記憶装置の製造方法 |
| JPS5922316B2 (ja) * | 1976-02-24 | 1984-05-25 | 株式会社東芝 | ダイナミツクメモリ装置 |
| US4040016A (en) * | 1976-03-31 | 1977-08-02 | International Business Machines Corporation | Twin nodes capacitance memory |
| US4103342A (en) * | 1976-06-17 | 1978-07-25 | International Business Machines Corporation | Two-device memory cell with single floating capacitor |
| CA1164710A (en) * | 1978-05-09 | 1984-04-03 | Edward J. Reardon, Jr. | Phototropic photosensitive compositions containing fluoran colorformer |
| DE2837877C2 (de) * | 1978-08-30 | 1987-04-23 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung eines MOS-integrierten Halbleiterspeichers |
| DE2855118C2 (de) * | 1978-12-20 | 1981-03-26 | IBM Deutschland GmbH, 70569 Stuttgart | Dynamischer FET-Speicher |
| EP0078338B1 (de) * | 1981-10-30 | 1986-02-05 | Ibm Deutschland Gmbh | FET-Speicher |
| JP5034133B2 (ja) * | 2000-02-29 | 2012-09-26 | 富士通セミコンダクター株式会社 | 半導体記憶装置 |
| JP4707244B2 (ja) * | 2000-03-30 | 2011-06-22 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置および半導体装置 |
| TWI359422B (en) | 2008-04-15 | 2012-03-01 | Faraday Tech Corp | 2t sram and associated cell structure |
-
1974
- 1974-06-28 DE DE2431079A patent/DE2431079C3/de not_active Expired
-
1975
- 1975-05-14 IT IT23304/75A patent/IT1038100B/it active
- 1975-05-21 JP JP5978375A patent/JPS5428252B2/ja not_active Expired
- 1975-05-21 GB GB21857/75A patent/GB1502334A/en not_active Expired
- 1975-05-22 CH CH657875A patent/CH581885A5/xx not_active IP Right Cessation
- 1975-05-23 FR FR7516563A patent/FR2276659A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS513824A (enrdf_load_stackoverflow) | 1976-01-13 |
| FR2276659A1 (fr) | 1976-01-23 |
| DE2431079C3 (de) | 1979-12-13 |
| CH581885A5 (enrdf_load_stackoverflow) | 1976-11-15 |
| DE2431079A1 (de) | 1976-02-12 |
| GB1502334A (en) | 1978-03-01 |
| FR2276659B1 (enrdf_load_stackoverflow) | 1980-01-04 |
| IT1038100B (it) | 1979-11-20 |
| DE2431079B2 (de) | 1979-04-26 |