JPS5421071B2 - - Google Patents

Info

Publication number
JPS5421071B2
JPS5421071B2 JP12004473A JP12004473A JPS5421071B2 JP S5421071 B2 JPS5421071 B2 JP S5421071B2 JP 12004473 A JP12004473 A JP 12004473A JP 12004473 A JP12004473 A JP 12004473A JP S5421071 B2 JPS5421071 B2 JP S5421071B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12004473A
Other languages
Japanese (ja)
Other versions
JPS4984178A (fr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4984178A publication Critical patent/JPS4984178A/ja
Publication of JPS5421071B2 publication Critical patent/JPS5421071B2/ja
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/06Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061Tipping system, e.g. by rotation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP12004473A 1972-11-20 1973-10-26 Expired JPS5421071B2 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1685072A CH541353A (de) 1972-11-20 1972-11-20 Vorrichtung zum epitaktischen Abscheiden von Halbleitermaterial durch Flüssigphasenepitaxie aus mindestens zwei Lösungen

Publications (2)

Publication Number Publication Date
JPS4984178A JPS4984178A (fr) 1974-08-13
JPS5421071B2 true JPS5421071B2 (fr) 1979-07-27

Family

ID=4420756

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12004473A Expired JPS5421071B2 (fr) 1972-11-20 1973-10-26

Country Status (6)

Country Link
US (1) US3858553A (fr)
JP (1) JPS5421071B2 (fr)
CA (1) CA1018872A (fr)
CH (1) CH541353A (fr)
DE (1) DE2357230C3 (fr)
GB (1) GB1447380A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3948211A (en) * 1975-04-08 1976-04-06 July Nikolaevich Griboedov Plant for chromizing metal articles
JPH04299828A (ja) * 1991-03-28 1992-10-23 Shin Etsu Handotai Co Ltd 半導体基板処理装置
JP2885268B2 (ja) * 1994-08-30 1999-04-19 信越半導体株式会社 液相成長方法及び装置
US6902619B2 (en) * 2001-06-28 2005-06-07 Ntu Ventures Pte. Ltd. Liquid phase epitaxy
US7959729B2 (en) * 2003-03-17 2011-06-14 Osaka University Method for producing group-III-element nitride single crystals and apparatus used therein
CN115074820B (zh) * 2022-06-17 2023-07-18 哈尔滨工业大学 一种单晶rig厚膜的双坩埚液相外延制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US553547A (en) * 1896-01-28 Half to samuel mawhinney
US2042559A (en) * 1933-11-17 1936-06-02 United Shoe Machinery Corp Conditioning device
SE338761B (fr) * 1967-10-20 1971-09-20 Philips Nv
US3827399A (en) * 1968-09-27 1974-08-06 Matsushita Electric Ind Co Ltd Apparatus for epitaxial growth from the liquid state
US3791344A (en) * 1969-09-11 1974-02-12 Licentia Gmbh Apparatus for liquid phase epitaxy
US3589336A (en) * 1969-12-29 1971-06-29 Bell Telephone Labor Inc Horizontal liquid phase epitaxy apparatus
US3692592A (en) * 1970-02-12 1972-09-19 Rca Corp Method and apparatus for depositing epitaxial semiconductive layers from the liquid phase
US3804060A (en) * 1970-03-27 1974-04-16 Sperry Rand Corp Liquid epitaxy apparatus
JPS53271B1 (fr) * 1971-03-05 1978-01-06

Also Published As

Publication number Publication date
CA1018872A (en) 1977-10-11
DE2357230A1 (de) 1974-05-30
CH541353A (de) 1973-09-15
US3858553A (en) 1975-01-07
DE2357230B2 (de) 1981-02-12
DE2357230C3 (de) 1981-10-29
JPS4984178A (fr) 1974-08-13
GB1447380A (en) 1976-08-25

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